Hynix Semiconductor Inc.

Skhynix Inc.

Ki-Chon Park

Jae-Hoon Cha

Jung-Hwan Ji

Jin-Hee Cho

Byoung-Jin Choi

Jin-Youp Cha

An address comparator circuit includes a first determination unit suitable for activating a first control signal when a first address corresponding to a previous read command is identical with a second address corresponding to a current read command; a second determination unit suitable for activating a second control signal when the previous and current read commands are consecutively inputted to the address comparator circuit with an interval of a specific number of clocks or less; and a blocking signal generation unit suitable for generating a blocking signal that blocks data transmission between a memory array and an external device based on the first and the second control signals.

Address comparator circuit for generating transmission control signal, memory device and memory system including the same

A memory device include a memory array, a transmitter suitable for outputting data to the outside of the memory device, and a data bus suitable for transmitting data of a selected memory cell in the memory array to the transmitter during a read operation. When successive read commands for the same memory cell are applied, data transmission from the memory array to the data bus is blocked, and data previously loaded in the data bus is outputted through the transmitter.

Memory device preventing fail caused by successive read operations and system including the same

A semiconductor memory device includes a first group configured to include a first bank and a second bank; a second group configured to include a third bank and a fourth bank; an address strobe pulse generating unit configured to generate an address strobe pulse signal for activating the first group and the second group in response to a first bank address and a command signal; and a strobe signal generating unit configured to generate a strobe signal that selects a bank from the first group and the second group in response to the address strobe pulse signal and a second bank address.

Semiconductor memory device

A semiconductor IC device which includes a common column signal generating block and a column strobe signal generating block. The common signal generating block can provide precolumn strobe signals by using external command signals and a first group of bank addresses among a plurality of bank addresses. The column strobe signal generating block can provide a plurality of column strobe signals to selectively activate a plurality of banks by using the precolumn strobe signals and a second group of bank addresses among the plurality of bank addresses that are not used when the precolumn strobe signals are generated.

Semiconductor integrated circuit and method thereof

A semiconductor memory device can output data according to a predetermined data output timing, in spite of a high frequency of system clock, even when a delay locked loop is disabled. The semiconductor memory device includes a delay locked loop configured to perform a delay locking operation on an internal clock to output delay locked clock, and a data output control unit configured to determine a data output timing, according to whether the delay locked loop is enabled or disabled, in response to a read command.

Data output timing in response to read command based on whether delay locked loop is enabled/disabled in a semiconductor device

A semiconductor memory device capable of reducing a whole area thereof includes a plurality of data input circuits configured to reflect inversion information on data inputted thereto, a plurality of global lines for transferring data outputted from the plurality of data input circuits, and a plurality of memory banks for storing data transferred from the plurality of global lines.

Data input circuit and semiconductor memory device including the same

Disclosed is a semiconductor memory device includes a selector for selectively loading read inversion information and write inversion information on an inversion bus, the inversion bus for transferring the inversion information loaded by the selector, a plurality of read inversion units for reflecting the inversion information from the inversion bus to output data, and a plurality of write inversion units for reflecting the inversion information from the inversion bus to input data.

The present invention provides a semiconductor memory device that can reduce unnecessary current consumption, as banks not accessing data maintain an inactivation state and do not receive an input address. A semiconductor memory device includes a plurality of banks grouped into a first group and a second group; and a bank control unit for selecting one of the first group and the second group in response to a bank address to transfer an address to the selected group.

Provided is a data strobe signal generating circuit capable of guaranteeing a preamble time (tRPRE). The data strobe signal generating circuit includes: a strobe output driver for outputting a data strobe signal to an outside of a semiconductor device so as to indicate synchronization between an external device and data input/output; and a preamble part for maintaining an output of the strobe output driver to a predetermined logic level during a predetermined delay time from an enabling timing of the preamble signal. Accordingly, it is possible to guarantee the stable operation of the semiconductor memory even when PVT (processor, operating voltage, operating temperature) changes.

Data strobe signal generating circuit and data strobe signal generating method

A semiconductor memory device including: a plurality of read sense amplifiers for amplifying an output data of a memory cell; a plurality of read delay controllers for delaying an output data of the read sense amplifier by a predetermined time; a plurality of read latches for outputting an output data of the read delay controller as an external data in response to a read strobe signal; a plurality of write sense amplifiers for sensing and amplifying the external data in response to a write strobe signal; a plurality of write delay controllers for delaying an output data of the write sense amplifier by a predetermined time; a plurality of write drivers for inputting an output data of the write delay controller to the memory cell in response to a write enable signal; and a plurality of data buses for transferring the data.

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Gyeonggi-do, South Korea

Ki-Chon Park