Samsung Electronics Co., Ltd.

Ki Byung Park

Seung Seok Ha

Kyoung Hwan Yeo

Seung Jae Lee

Sang Jin Hyun

Kyung Yub Jeon

Seung Ju Park

Do Hyoung Kim

Keun Hee Bai

Dae Young Kwak

Myeong Cheol Kim

Jae Hyoung Koo

Semiconductor devices are provided. A semiconductor device includes a semiconductor substrate. The semiconductor device includes first and second source/drain regions in the semiconductor substrate. Moreover, the semiconductor device includes a multi-layer device isolation region in the semiconductor substrate between the first and second source/drain regions. The multi-layer device isolation region includes a protruding portion that protrudes away from the semiconductor substrate beyond respective uppermost surfaces of the first and second source/drain regions.

Semiconductor devices including a device isolation region in a substrate and/or fin

There is provided a method for manufacturing a semiconductor device including a substrate including a plurality of active regions, a plurality of gate electrodes extending in a first direction to intersect a portion of the plurality of active regions, and including first and second gate electrodes disposed to be adjacent to each other in the first direction, a gate isolation portion disposed between the first and second gate electrodes. The gate isolation portion includes a first layer and second layers disposed on both ends of the first layer in a second direction perpendicular to the first direction.

Method for manufacturing semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Ki Byung Park