Seagate Technology Incorporated

Khuong T Tran

Zheng Gao

Song Sheng Xue

Brian William Karr

Eric Leroy Granstrom

Yi X Li

Mark Thomas Kief

Konstantin Nikolaev

Janusz Josef Nowak

A sensor includes a sensor stack and a layer of high resistivity material having a precursor within the sensor stack. When a current is applied at the precursor, a current confining path is formed through the layer of high resistivity material at the precursor. The shape of the current confining path is adjustable by adjusting a thickness of the layer of high resistivity material.

Current perpendicular to plane magnetoresistive sensor pre-product with current confining path precursor

A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 &#x3a9;&#xb7;&#x3bc;m.

Magnetic sensing device including a sense enhancing layer

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Fridley, MN, United States of America

Khuong T Tran