Texas Instruments Corporation

Khanh Quang Le

Bhaskar Srinivasan

Jonathan Philip Davis

Eugene C Davis

Sopa Chevacharoenkul

Shariq Arshad

Damien Thomas Gilmore

Bernard John Fischer

Azghar H Khazi-Syed

Collin White

Ashley Norris

Sarah Elizabeth Bradshaw

Jonathan Roy Garrett

Kaneez Eshaher Banu

A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

Method of reducing voids and seams in trench structures by forming semi-amorphous polysilicon

A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor substrate having an aspect ratio (AR) &#x2267;5 and a trench depth &#x2267;10 &#x3bc;m. A dielectric liner is formed along the walls of the trench to form a dielectric lined trench. In-situ doped polysilicon is deposited into the trench to form a dielectric lined polysilicon filled trench having a doped polysilicon filler therein. The doped polysilicon filler after completion of fabricating the IC is essentially polysilicon void-free and has a 25&#xb0; C. sheet resistance &#x2266;100 ohms/sq. The method can include etching an opening at a bottom of the dielectric liner before depositing the polysilicon to provide ohmic contact to the semiconductor substrate.

In-situ doped polysilicon filler for trenches

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Garland, TX, United States of America

Khanh Quang Le