Imec Vzw

Interuniversitair Microelektronica Centrum (imec)

Khalid Said

Matty Caymax

Jef Poortmans

Johan F Nijs

Lieven Stalmans

A thin-film opto-electronic device on a conductive silicon-containing substrate includes a sequence of layers. The layers include a layer of a porous medium preferably a porous silicon, on a substrate. The porous layer has both light diffusing and light reflecting properties. In addition, a non-porous layer is located on said porous silicon layer, with at least one first region and at least one second region being in said non-porous layer. The first region is of a first conductivity type acting as a light absorber and the second region has a conductivity of a second type, different from said first conductivity type. The sequence of layers is such that optical confinement is realised in the device.

Thin-film opto-electronic device and a method of making it

The present invention is related to a thin-film opto-electronic device and a method of fabricating the same. Particularly this thin film opto-electronic device is fabricated on a Si-containing substrate. The thin-film material is a crystalline semiconductor material. In order to increase the efficiency of this device a porous silicon layer is applied between the thin-film and the substrate. This porous silicon layer has both light reflecting and light diffusing properties thereby giving rise to light confinement in the thin-film.

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Leuven, Belgium

Khalid Said