Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Toyota Jidosha Kabushiki Kaisha

Mitusbishi Denki Kabushiki Kaisha

Khalid Hassan Hussein

Shoji Saito

Kazuaki Hiyama

Mitsutaka Iwasaki

Shinji Hatae

Tooru Iwagami

Shintaro Araki

Koichi Ushijima

Mitsunori Aiko

Gorab Majumdar

Junichi Yamashita

Kota Manabe

Gourab Majumdar

Tomohiko Kaneko

Takahiko Hasegawa

Akira Yamamoto

Yoshikazu Tsunoda

Takaaki Shirasawa

Fumio Wada

Arata Iizuka

Shigeto Fujita

Korehide Okamoto

Fumitaka Tametani

Ken Takanashi

Toshiyuki Kumagai

Hisao Kondo

Masuo Shinohara

A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.

Semiconductor device

A semiconductor module having a plurality of cooling fins and a fixing cooling fin longer than the plurality of cooling fins, the fixing cooling fin having a threaded hole provided in distal end portion thereof, a cooling jacket having a cooling medium passage in which the plurality of cooling fins and the fixing cooling fin are housed, and an opening formed so as to enable a screw to be inserted in the threaded hole, and a screw passed through the opening to be inserted in the threaded hole, the cooling jacket being fixed to the semiconductor module with the screw are provided.

Semiconductor device and semiconductor module having cooling fins

A semiconductor device of the present invention includes a semiconductor element having an upper surface and a lower surface, a metal plate thermally connected to the lower surface, an upper surface electrode soldered to the upper surface, an insulating sheet formed on the upper surface electrode so as to be in surface contact with the upper surface electrode, a shielding plate formed on the insulating sheet so as to be in surface contact with the insulating sheet, the shielding plate shielding against radiation noise, and a resin with which the semiconductor element is covered, while a portion of the upper surface electrode, a portion of the shielding plate and a lower surface of the metal plate are exposed to the outside, wherein the heat conductivity of the insulating sheet is higher than the heat conductivity of the resin.

An object of the present invention is to achieve reductions in size and costs of a vehicle-mounted motor driving control board in a configuration which allows the redundancy of a power supply to be ensured. The vehicle-mounted motor driving control board is formed by one printed circuit board on which are formed two inverter driving circuits for driving two inverter circuits for three-phase motors, and a voltage step-up/step-down driving circuit for driving a voltage step-up/step-down circuit for supplying electric power to the inverter circuits. The vehicle-mounted motor driving control board further includes a first power supply circuit for supplying electric power to part of constituent circuits constituting the voltage step-up/step-down driving circuit and the two inverter driving circuits, and a second power supply circuit for supplying electric power to the remainder of the constituent circuits in the voltage step-up/step-down driving circuit and the two inverter driving circuits.

Vehicle-mounted motor driving control board

A semiconductor device includes a semiconductor element including a first element portion having a first gate and a second element portion having a second gate, wherein the turning on and off of the first and second element portions are controlled by a signal from the first and second gates respectively. The semiconductor device further includes signal transmission means connected to the first gate and the second gate and transmitting a signal to the first gate and the second gate so that when the semiconductor element is to be turned on, the first element portion and the second element portion are simultaneously turned on, and so that when the semiconductor element is to be turned off, the second element portion is turned off a delay time after the first element portion is turned off.

Semiconductor device and semiconductor element

A voltage conversion circuit apparatus that adjusts a timing skew between the switching control of the first switching element and the switching control of the second switching element includes: a skew storage portion that stores a timing skew between the switching controls of the first and second switching elements after the voltage conversion circuit apparatus is manufactured; and a timing adjustment portion that corrects the stored timing skew and thereby adjusts the timing relation between a first pulse signal and a second pulse signal so as to bring within a permissible range the timing skew that occurs when the switching controls of the first and second switching elements are performed by using the first pulse signal and the second pulse signal.

DC-DC converter with an auxiliary circuit for performing soft-switching

A gate circuit includes a gate resistive element connected at one end to the gate of a power device, an on-switching device connected between a power supply and the other end of the gate resistive element, a first resistive element whose connection to the gate is controlled by a first switching device, a second resistive element whose connection to the gate is controlled by a second switching device, and having a higher resistance value than the first resistive element, excessive current suppression means for turning on the first switching device just when the current in the power device reaches a predetermined value, and turn-off delay means for, after the excessive current suppression means turns on the first switching device, turning off the on-switching device and the first switching device and turning on the second switching device to turn off the power device.

Gate circuit

A power semiconductor device includes first and second power semiconductor elements connected in parallel to each other and a drive control unit. The drive control unit turns on or off each of the first and second power semiconductor elements in response to an ON instruction and an OFF instruction repeatedly received from outside. Specifically, the drive control unit can switch between a case where the first and second power semiconductor elements are simultaneously turned on and a case where one of the first and second power semiconductor elements is turned on first and thereafter the other thereof is turned on, in response to the ON instruction. The drive control unit turns off one of the first and second power semiconductor elements first and thereafter turns off the other thereof, in response to the OFF instruction.

Power semiconductor device having plurality of switching elements connected in parallel

A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.

Power module

Provided is a DC-DC converter capable of reducing not only a turn-off loss but also a turn-on loss. A snubber capacitor has one end connected to an anode of a step-up diode, a current input end of a step-up switching element and a main reactor. A first snubber diode has a cathode connected to other end of the snubber capacitor, and an anode connected to a cathode of the step-up diode. A second snubber diode has an anode connected to the cathode of the first snubber diode and other end of the snubber capacitor. A snubber reactor has one end connected to the anode of the first snubber diode, and other end connected to a cathode of the second snubber diode.

DC-DC converter

A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.

An insulated gate bipolar transistor and a protective circuit are incorporated. The protective circuit has first and second Zener diodes connected in series in directions opposite to each other between the gate and the current sense terminal of the insulated gate bipolar transistor, and third and fourth Zener diodes connected in series in directions opposite to each other between the gate and the emitter of the insulated gate bipolar transistor.

Power conversion device

A PWM inverter in which high-surge voltage is not applied across terminals of a switching device thereof is provided by preventing multi-phase simultaneous switching. A multi-phase simultaneous-switching prevention circuit () that includes: a plurality of input means each for taking in, as an input signal, one of multi-phase control signals outputted from a PWM signal generating circuit; blocking pulse generating means each for generating a blocking pulse, for a predetermined period, in synch with the rising or the falling of the input signal of one phase, in order to block the rising or the falling of the input signals of the other phases; blocking signal forming means each for outputting a blocking signal whose blocking period is made to be the width of a pulse formed by the logical sum of a plurality of the other-phase blocking pulses from the blocking pulse generating means; signal blocking means each for receiving the input signal of the one phase, and outputting a signal whose rising or falling is delayed until the end of the blocking period; and a plurality of output means each for outputting to the exterior of the prevention circuit the output signal from the signal blocking means, is inserted across a gate driving circuit (), and a three-phase PWM signal generating circuit ().

Multiple phase simultaneous switching preventing circuit, PWM inverter and its driving method

An inverter circuit to reduce a resistor for overcurrent detection and decrease the number of filters in an inverter circuit for supply polyphase power. Transistors each having a current detection terminal and a protective diode for regenerative current are adopted as switching elements on an 'L' side and their current detection terminals are connected in common to a resistor. Therefore, a voltage drop caused by a current flowing in the resisytor becomes larger when an overcurrent flows in at least one of the transistors and further when an overcurrent flows in a switching element on an 'H' side even if no overcurrent flows in any one of the transistors.

Growing community of inventors

Tokyo, Japan

Khalid Hassan Hussein