Asml Netherlands B.v.

Khalid Elbattay

Roy Werkman

Peter Ten Berge

Erik Jensen

Pieter Gerardus Jacobus Smorenberg

Theo Wilhelmus Maria Thijssen

Putra Saputra

Paul Derwin

Rowin Meijerink

Ma Su Su Hlaing

Bo Zhong

Masaya Komatsu

Steven Erik Steen

Hyun-Woo Yu

A method for controlling a process of manufacturing semiconductor devices, the method including: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data including data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on the bonded substrate metrology data, the determining a correction including determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

Method for controlling a manufacturing process and associated apparatuses

A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

Sub-field control of a lithographic process and associated apparatus

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Eindhoven, Netherlands

Khalid Elbattay