United Microelectronics Corp.

Kevin Yu

Chien-Hsin Lai

Juen-Kuen Lin

Huang-Yi Lin

Jung-Nan Tseng

Huang-Yi Li

Polishing slurry is transported via piping to flow into the closed loop control system. First, the polishing slurry flows into the ultrasonic concentration detector. Original data of the polishing slurry that is determined by means of ultrasonic concentration detector is a fluid velocity at that time. This determined value can be converted into weight percent concentration at that time by memory data table. The converted data of weight percent concentration will be transmitted into program logic controller (PLC), and the data of liquid level volume in the distribution tank will be transmitted into program logic controller at present. The program logic controller will then analyze whether the quantity of oxidant is sufficient. If the quantity of oxidant does not reach the required criterion, the program logic controller will control the analog valve to transmit a supplementary quantity of oxidant into the distribution tank via the analog valve and piping.

Closed loop concentration control system for chemical mechanical polishing slurry

A pressure monitoring system arranged in a close loop circuit, intended to facilitate chemical mechanical polishing (CMP), is disclosed. The pressure monitoring circuit includes an air regulator, a pressure transducer, a pressure difference transducer and a pressure difference regulator. This hardware is equipped to facilitate finding three control parameters of the monitoring system&mdash;polishing pressure (P ), pressure difference of the polishing pressure and a corresponding wafer pressure (D ), and deviation of the output pressure difference from a set point pressure difference (C ). By monitoring P , D and C , air streams in a CMP process can be effectively regulated on a real time basis and the troubleshooting procedure for the system hardware can be practically reduced.

Pressure monitoring system for chemical-mechanical polishing

The present invention relates to improved chemical mechanical polishing apparatus, which reduce air sharp pressure on the polish head for preventing the breakage unpolished wafer. The improved chemical mechanical polishing apparatus of present invention is composed of a wafer head, a polish head, a damper and a sensor. The flowing speed of gas is reduced by making the diameter of the gas line connected to the damper air inlet smaller than the diameter of the gas line connected to the damper air outlet. The initial air sharp pressure is reduced and make &Dgr;P&equals;P &minus;P <0, by adding an air temporary storage machine in between the inlet and the outlet. Besides, putting a sensor on the air lines under the air temporary storage machine, when slurry flows in the air line owing to the breaking of slurry diaphragm, the sensor will send a signal to a control system of the improved apparatus of chemical mechanical polishing, and make the related parts stop operating automatically to avoid breaking.

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Hsin-Chu, Taiwan

Kevin Yu