Qorvo Us, Inc.

Trw Limited

Rf Micro Devices, Inc.

Sirenza Microdevices, Inc.

Northrop Grumman Systems Corporation

Kevin Wesley Kobayashi

Hamhee Jeon

Charles Forrest Campbell

Aaron K Oki

Andrew P Ritenour

Haldane S Henry

George W McIver

Ricke Waylan Clark

Dwight C Streit

Nadim Khlat

George Adrian Maxim

Baker P Scott

Chris Levesque

Paul Edward Gorday

Barry Ross Allen

Praveen Varma Nadimpalli

Joseph Herbert Johnson

Dan Denninghoff

Donald K Umemoto

Jose Jimenez

Duncan M Smith

Arvind K Sharma

Stephen Todd Fariss

Donald Katsu Umemto

A reinforcement learning receiver front-end (RL-RXFE) is disclosed having a low-noise amplifier (LNA) with adjustable supply voltage and adjustable bias voltages, a frequency selective limiter (FSL) coupled to the LNA and configured to attenuate undesired radio frequency (RF) bands and for sensing RF band power, and a combination of an analog-to-digital converter configured to convert an RF signal amplified by the LNA to a digital signal, a digital signal processor configured to generate spectrum information from the digital signal, and a baseband distortion by-product detector/sensor configured to generate distortion by-product information, and LNA dynamic information. A reinforcement learning processing circuitry receives and uses this information to perform reinforcement learning and to output control signals to the FSL and the LNA to maximize linearity and efficiency.

Reinforcement learning receiver front-end

A load modulation amplifier is disclosed having a first amplifier and a second amplifier. An input quadrature coupler and an output quadrature coupler are coupled between the first amplifier and the second amplifier. A splitter has a first splitter output, a splitter input coupled to a signal input, and a second splitter output coupled to a second port of the input quadrature coupler, and a variable attenuator is coupled between the first splitter output and a first port of the input quadrature coupler. An attenuation controller has a controller output that is coupled to an attenuation control input of the variable attenuator, wherein the attenuation controller autonomously generates a control signal in response to a power sample signal in proportion to a radio frequency signal received at the radio frequency signal input.

Autonomous analog orthogonal load modulation power amplifier

The present disclosure relates to an amplifier system having an output amplifier stage with a signal input and output, and a varactor with a capacitive output that is coupled to the signal input for adjusting input capacitance. The amplifier system also includes push varactor bias circuitry with a bias level output that is coupled to a tuning input, and a bias control input. The push varactor bias circuitry is configured to adjust bias voltage at the tuning input and thereby adjust the capacitance at the signal input by way of the varactor and reduce signal distortion at the signal output in response to a distortion compensation signal received at the bias control input.

Amplifier system

A reconfigurable amplifier configured to decrease radio frequency (RF) signal distortion and increase dynamic range is disclosed. The reconfigurable amplifier includes an amplifier having an RF signal input, an RF signal output, and a bias signal input. A distortion detection network has a detector input coupled to the RF signal output and a detector output, wherein the distortion detector network is configured to generate a detection signal that is proportional to distortion at the RF signal output. A bias controller has a detection signal input coupled to the detector output and a bias output coupled to the bias signal input. The bias controller is configured to generate a bias signal that dynamically shifts level at the bias output to reduce the distortion at the RF signal output in response to the detection signal.

Reconfigurable amplifier

Disclosed is an active photonic device having a Darlington configuration with a substrate and a collector layer that is over the substrate. The collector layer includes an inner collector region. An outer collector region substantially surrounds the inner collector region and is spaced apart from the inner collector region. A base layer is over the collector layer. A first outer base region and a second outer base region substantially surround the inner base region and are spaced apart from the inner base region and each other. An emitter layer is over the base layer. The emitter layer includes an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region. A first outer emitter region and a second outer emitter region substantially surround the inner emitter region and are spaced apart from the inner emitter region and each other.

Active photonic device having a darlington configuration with feedback

A reconfigurable low-noise amplifier (LNA) is disclosed. The reconfigurable LNA includes amplifier circuitry having a gate terminal coupled to an input terminal, a source terminal coupled to a fixed voltage node, and a drain terminal coupled to an output terminal. The reconfigurable LNA further includes a gamma inverting network (GIN) coupled between the input terminal and the fixed voltage node, wherein the GIN has a first switch configured to disable the GIN during operation at first frequencies within a lower frequency band relative to a higher frequency band and to enable the GIN during operation at second frequencies within the higher frequency band.

Reconfigurable low-noise amplifier (LNA)

A transition frequency multiplier semiconductor device having a first source region, a second source region, and a common drain region is disclosed. A first channel region is located between the first source region and the common drain region, and a second channel region is located between the second source region and the common drain region. A first gate region is located within the first channel region to control current flow between the first source region and the common drain region, while a second gate region is located within the second channel region to control current flow between the second source region and the common drain region. An inactive channel region is located between the first channel region and the second channel region such that the first channel region is electrically isolated from the second channel region.

Transition frequency multiplier semiconductor device

A gallium nitride (GaN) power amplifier having a plurality of amplifier stages integrated into a monolithic integrated circuit is disclosed. The plurality of amplifier stages is coupled together between a radio frequency signal input and a radio frequency signal output, wherein at least one of the plurality of amplifier stages includes a first GaN transistor that is configured to have a first breakdown voltage that is no more than 75% of a second breakdown voltage of a second GaN transistor included in a different one of the plurality of amplifier stages.

Gallium nitride power amplifier

An RF power amplifier includes a quadrature coupler, an in-phase amplifier, a quadrature amplifier, and a feed-forward signal path. The quadrature coupler includes an in-phase input node, a quadrature input node, an isolated node, and an RF signal output node. The in-phase amplifier includes an in-phase amplifier output node coupled to the in-phase input node. The quadrature amplifier includes a quadrature amplifier output node coupled to the quadrature input node. The feed-forward signal path is configured to couple and condition a signal from one of the in-phase amplifier and the quadrature amplifier in order to provide a feed-forward output signal that when provided at the feed-forward output node cancels one or more harmonic signals.

Radio frequency power amplifier with feed-forward signal path

A load modulation amplifier is disclosed. The load modulation amplifier includes a carrier amplifier for amplifying a radio frequency signal when input power of the radio frequency signal is below a predetermined power threshold value and a peak amplifier coupled in parallel with the carrier amplifier for amplifying the radio frequency signal when input power of the radio signal is above the predetermined power threshold value. The load modulation amplifier further includes an output quadrature coupler configured to combine power from both the carrier amplifier and the peak amplifier for output through an output load terminal. Output impedance of the peak amplifier monotonically increases with increasing output power at the output load terminal.

Load modulation amplifier

A distributed amplifier (DA) is disclosed. The DA includes a first plurality of inductive elements coupled in series forming a first plurality of connection nodes. The DA also includes a second plurality of inductive elements coupled in series forming a second plurality of connection nodes. The DA further includes a plurality of amplifier cells that each has a main transistor and a cascode transistor coupled into a cascode configuration. The cascode transistor has a current input coupled to a corresponding one of the first plurality of connection nodes. An input transistor has a control terminal coupled to a corresponding one of the second plurality of connection nodes, a current input terminal configured to provide a bias tuning for the DA, and a third current output terminal coupled to a control terminal of the main transistor and configured to provide a separate bias tuning for the DA.

Linearized distributed amplifier architecture

An electronically reconfigurable matching network having a plurality of electronically reconfigurable components is disclosed. Each of the plurality of electronically reconfigurable elements includes a plurality of selectable impedance elements coupled together. Each selectable impedance element includes an impedance element coupled between first and second end terminals and a field-effect transistor (FET)-based switch coupled between the first and second end terminals. The FET-based switch includes a first FET having first and second current terminals coupled to a first gate terminal and a second FET having a third current terminal coupled to the first gate terminal, a fourth current terminal, and a second gate terminal coupled to a first control terminal; and a third FET having a fifth current terminal coupled to the first end terminal, a sixth current terminal coupled to the second end terminal, and a third gate terminal coupled to the third current terminal.

Electronically reconfigurable matching network

Active photonic device having a Darlington configuration with feedback

A transition frequency multiplier semiconductor device having a first source region, a second source region, and a common drain region is disclosed. A first channel region is located between the first source region and the common drain region, and a second channel region is located between the second source region and the common drain region. A first gate region is located within the first channel region to control current flow between the first source region and the common drain region, while a second gate region is located within the second channel region to control current flow between the second source region and the common drain region. An inactive channel region is located between the first channel region and the second channel region such that the first channel region is electrically isolated from the second channel region. A conductive interconnect couples the first source region to the second gate region.

Growing community of inventors

Torrance, CA, United States of America

Kevin Wesley Kobayashi