Mks Instruments, Inc.

Axcelis Technologies, Inc.

Kevin Wenzel

Xing Chen

Ilya Pokidov

Colin Sanford

David Lam

Bo H Vanderberg

Gordon Hill

Scott Benedict

Feng Tian

Ken Tran

Atul Gupta

Mohammad Kamarehi

Olivia Keller

Ken Trenholm

Joshua Lamontagne

Andrew M Ray

Michael Cristoforo

Erin Madden

Chengxiang Ji

Ken Trenhom

A vacuum pumping line plasma source is provided. The plasma source includes a body defining a generally cylindrical interior volume extending along a central longitudinal axis. The body has an input port for coupling to an input pumping line, an output port for coupling to an output pumping line, and an interior surface disposed about the generally cylindrical interior volume. The plasma source also includes a supply electrode disposed adjacent to a return electrode, and a barrier dielectric member, a least a portion of which is positioned between the supply electrode and the return electrode. The plasma source further includes a dielectric barrier discharge structure formed from the supply electrode, the return electrode, and the barrier dielectric member. The dielectric barrier discharge structure is adapted to generate a plasma in the generally cylindrical interior volume.

Method and apparatus for deposition cleaning in a pumping line

A microwave system has a solid-state generator which generates microwave energy and includes at least one control input for receiving a control signal to vary electrically a parameter of the microwave energy. A microwave load receives the microwave energy and produces an effect in response to the microwave energy. A microwave conducting element couples the microwave energy to the microwave load. An impedance match adjusting device is coupled to the microwave conducting element to vary at least one of the parameters of the microwave energy. The effect produced in response to the microwave energy is altered by both electrical variation of the parameter of the microwave energy via the control signal and adjustment of the impedance match adjusting device to vary the parameter of the microwave energy.

Microwave applicator with solid-state generator power source

A method is provided for cleaning a pumping line having a plurality of inline plasma sources coupled thereto. The method includes supplying a cleaning gas to the pumping line from a wafer processing chamber connected to the pumping line. The method also includes generating a localized plasma at one or more of the plurality of inline plasma sources using the cleaning gas flowing in the pumping line. Each localized plasma is adapted to clean at least a portion of the pumping line. The method further includes determining one or more impedances of the localized plasma at the one or more inline plasma sources and monitoring the one or more impendences to detect an endpoint of the cleaning.

Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

Method and apparatus for processing dielectric materials using microwave energy

An apparatus and method for determining the health of a plasma system by igniting a plasma within a plasma confining volume generate an ignition signal with an ignition circuit and apply the ignition signal between a biased region and a grounded region in the vicinity of the plasma confining volume. A parameter in the ignition circuit is sensed, and the sensed parameter is compared to a first parameter threshold. A condition associated with the plasma confining volume is determined if the sensed parameter differs from the first voltage threshold, and a corrective action can be taken.

Apparatus and method for ignition of a plasma system and for monitoring health of the plasma system

An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

Toroidal plasma abatement apparatus and method

An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

Microwave plasma applicator with improved power uniformity

An ion beam current density profiler includes a pair of counter-rotating cylindrical masks each featuring a helical slot. The intersection of the slots forms an aperture that scans the width of a ribbon ion beam to allow discrete portions of the beam to impact an inner, concentric current collecting cylinder.

Method and apparatus for ion beam profiling

Ion implantation systems and scanning systems therefor are provided, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods are provided for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.

Ion beam scanning systems and methods for improved ion implantation uniformity

Ion implantation systems and beam containment apparatus therefor are provided in which a photoelectron source and a photon source are provided along a beam path. The photon source, such as a UV lamp, provides photons to a photoemissive material of the photoelectron source to generate photoelectrons for enhanced beam containment in the ion implantation system.

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Belmont, MA, United States of America

Kevin Wenzel