Microsoft Technology Licensing, LLC

Kevin Van Hoogdalem

Peter Krogstrup Jeppesen

Leonardus Petrus Kouwenhoven

Roman Mykolayovych Lutchyn

Pavel Aseev

Andrey Antipov

William Scott Cole, Jr

Tom Marijn Laeven

Naganivetha Thiyagarajah

Eoin Conor O'farrell

Roland Zeisel

A superconductor-semiconductor device is provided, including a hybrid superconductor-semiconductor wire. The superconductor-semiconductor device may further include a hybrid localization length (LL) measurement device including a plurality of contact gates located above the hybrid superconductor-semiconductor wire in a thickness direction. The hybrid LL measurement device may further include a conductance sensor electrically coupled to the plurality of contact gates.

Hybrid wire localization length measurement device

Various fabrication methods are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

Fabrication methods

Various fabrication method are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

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Zoetermeer, Netherlands

Kevin Van Hoogdalem