Applied Materials Israel Limited

Kevin Ryan Houchens

Lavi Jacov Shachar

Shay Attal

Vladislav Kaplan

Jatin Balodhi

Rahul Shenoy

Jenny Perry

Nahum Bomshtein

Arjun Das Manaparambil

Tal Itzkovich

Mohan Gopinathan

There are provided systems and methods comprising obtaining design data of each of a plurality of given overlay targets comprising a plurality of stacked layers, using at least part of the design data to simulate image data of each given overlay target that would have been acquired by an electron beam examination system, using the image data to determine, before actual manufacturing of each given overlay target, second data informative of estimated probability that each given overlay target, upon being manufactured according to the design data, provides measurement data in an overlay measurement process meeting a measurement quality criterion, and using the second data of each given overlay target to select at least one optimal overlay target among the plurality of different overlay targets, wherein the at least one optimal overlay target is usable to be actually manufactured on the semiconductor specimen.

Optimal determination of an overlay target

A method for overlay monitoring including: obtaining a secondary electron image and a backscattered electron image of as area of the substrate in which an array of first structural elements are positioned at a surface of the substrate and a second array of second structural elements are positioned below the first array; determining locations of the first structural elements within the secondary electron image; defining regions of interest in the backscattered electron image, based on the locations of the first structural elements; processing pixels of the backscattered electron image that are located within the regions of interest to provide a backscattered electron representation of a second structural element; and calculating an overlay error based on location information regarding the second structural element within the backscattered electron representation of the second structural element and on location information regarding of at least one first structural element in the secondary electron image.

Overlay monitoring

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Rehovot, Israel

Kevin Ryan Houchens