Micron Technology Incorporated

Kevin Roy Brandt

Sampath K Ratnam

Kishore Kumar Muchherla

Peter Sean Feeley

Daniel J Hubbard

Christopher S Hale

Ashutosh Malshe

Yun Li

Marc S Hamilton

Preston Allen Thomson

Scott Anthony Stoller

Adam J Hieb

Jonathan Tanguy

Thomas Cougar Van Eaton

Renato C Padilla

Todd A Marquart

Qisong Lin

William Richard Akin

Saeed Sharifi Tehrani

Andrew M Kowles

Akira Goda

David Scott Ebsen

William C Filipiak

Shaun Stickel

Cory M Steinmetz

Brent Byron

Michael G McNeeley

João Elmiro Chaves

Aspects of the present disclosure configure a memory sub-system controller to allow a host to deallocate data prior to folding operations. The controller generates an instruction to fold data stored in an individual portion of the set of memory components. The controller, prior to executing the instruction to fold the data stored in the individual portion of the set of memory components, transmits a communication to a host indicative of the instruction to fold the data stored in the individual portion. The controller conditions execution of the instruction to fold the data stored in the individual portion of the set of memory components based on transmission of the communication to the host.

Preemptively warning host of background folding

A data erase operation is performed on the memory system. The directed data erase operation performed on the memory system erases blocks of the memory device including blocks that are indicated as not including user data. In some embodiments, a data erase operation may be performed on a memory system to erase those groups of memory cells (e.g., blocks) indicated as not including user data. In some embodiments, a data erase operation may be performed on a memory system to erase those groups of memory cells (e.g., blocks) indicated as valid without erasing those groups of memory cells (e.g., blocks) indicated as invalid. In some embodiments, a data erase operation that can be performed on a memory system may obtain information associated with failing scenes of groups of memory cells (e.g., blocks) prior to obtaining the information, and erase the blocks (e.g., invalid blocks) subsequently.

Data erase operations for a memory system

A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: designate a storage mode for a target set of memory cells based on valid data in a source block, wherein the target set of memory cells are configured with a capacity to store up to a maximum number of bits per cell, and the storage mode is for dynamically configuring the target set of memory cells in as cache memory that stores a number of bits less per cell than the corresponding maximum capacity.

Memory device with dynamic cache management

Exemplary methods, apparatuses, and systems include a media temperature manager receiving operating temperature measurements for a memory subsystem. The media temperature manager generates an average temperature using the operating temperature measurements. The media temperature manager determines that the average temperature satisfies a first value for a dynamic temperature threshold. The dynamic temperature threshold indicates a temperature at which the memory subsystem throttles media operations. The media temperature manager increases the dynamic temperature threshold to a second value in response to the average temperature satisfying the first value for the dynamic temperature threshold.

Managing dynamic temperature throttling thresholds in a memory subsystem

A total estimated occupancy value of a first data on a first data block of a plurality of data blocks is determined. To determine the total estimated occupancy value of the first data block, a total block power-on-time (POT) value of the first data block is determined. Then, a scaling factor is applied to the total block POT value to determine the total estimated occupancy value of the first data block. Whether the total estimated occupancy value of the first data block satisfies a threshold criterion is determined. Responsive to determining that the total estimated occupancy value of the first data block satisfies the threshold criterion, data stored at the first data block is relocated to a second data block of the plurality of data blocks.

Power-on-time based data relocation

Various examples are directed to memory systems comprising a component and a processing device. The memory system may comprise a plurality of blocks. A first portion of the plurality of blocks may be retired and a second portion of the plurality of blocks may be unretired. The processing device receives a sanitize operation for the plurality of blocks. The processing device initiates a first erase cycle at a first retired block of the plurality of blocks. The processing device determines that the first erase cycle was not successful and sets an erase indicator to false.

Data erasure in memory sub-systems

A failed erase operation is detected at a memory block of a memory device. Based on detecting the failed erase operation at the memory block, data on the memory block is destroyed using a data destruction algorithm that corrupts data stored by one or more cells of the block. The data on the memory block is verified to be destroyed. A passing data destruction status for the memory block is provided based on verifying the data on the memory block is destroyed.

Destruction of data and verification of data destruction on a memory device

System and methods are disclosed include a memory device and a processing device coupled to the memory device. The processing device can determine an amount of valid management units in a memory device of a memory sub-system. The processing device can then determine a surplus amount of valid management units on the memory device based on the amount of valid management units. The processing device can then configure a size of a cache of the memory device based on the surplus amount of valid management units.

Cache management based on memory device over-provisioning

A processing device in a memory system detects a data loss occurrence in a block of a memory component. The processing device further designates the block as a quarantined block, performs a stress test on the block, and depending on whether the stress test on the block satisfies a testing criterion, either designates the block as usable by the memory component or retires the block of the memory component.

Managing block retirement for temporary operational conditions

Various examples are directed to systems and methods for managing a memory device. Processing logic may identify a set of retired blocks at the memory device that were retired during use of the memory device. The processing logic may modify a first table entry referencing the first block to indicate that the first block is not retired. The processing logic may also modify a second table entry referencing the second block to indicate that the second block is not retired. The processing logic may also recreate a logical-to-physical table entry for a first page of at the first block, the logical-to-physical table entry associating a logical address with the first page.

Unretiring memory device blocks

Various embodiments described herein provide for adjusting (e.g., increasing) buffer memory space, provided by memory (e.g., active memory) of a memory sub-system used to store logical-to-physical memory address (L2P) mapping data, by reducing the amount of L2P mapping data stored on the memory.

Adjustable buffer memory space

A first delay value is obtained by a first memory subsystem of a plurality of memory subsystems. The first memory subsystem performs a first scan operation after a first time from a first event for the first memory subsystem. The first time is based on the first delay value. A second memory subsystem of the plurality of memory subsystems performs a second scan operation based upon a second delay value that is different than the first delay value.

Performing asynchronous scan operations across memory subsystems

An apparatus includes a component coupleable to a memory device. The component can be configured to analyze a plurality of sets of memory cells of the memory device to determine quality attributes associated with the plurality of sets of memory cells and assign grades to one or more sets of the memory cells based, at least in part, on the determined quality attributes. The component can be configured to allocate at least one of the plurality of sets of memory cells for use by the memory device based, at least in part, on the assigned grade associated with the one or more sets of the memory cells.

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Boise, ID, United States of America

Kevin Roy Brandt