Freescale Semiconductor,inc.

Texas Instruments Corporation

Nxp Usa, Inc.

Kevin R Fugate

Paige M Holm

Edward W Carstens

Peter T Jones

William DeWitt McWhorter

Kenneth L Arcudia

Carlos M Acuna

Dean W Miller

Mohammad A Faruque

Jordan P Legendre

Todd D Hoffmann

Rigoberto Lopez, Jr

Methods, systems and apparatus are provided to apply a magnetic pre-conditioning to magnetic tunneling junction (MTJ) sensors and other micro-magnetic devices after fabrication but before testing, trimming or other subsequent processing. The fabricated sensor device is passed through a magnetic field that has a known direction and orientation relative to the device so that the device is placed into a known state prior to final testing and trimming. Various embodiments allow the field to be applied in situ by a permanent magnet or electromagnet as the devices are being processed by a conventional device handler or similar processing system.

Magnetic pre-conditioning of magnetic sensors

Apparatus, systems, and methods are provided for sensing devices. An exemplary sensing device includes a sensing arrangement on a substrate to sense a first property, a heating arrangement, and a control system coupled to the first sensing arrangement and the heating arrangement to activate the heating arrangement to heat the first sensing arrangement and deactivate the heating arrangement while obtaining one or more measurement values for the first property from the first sensing arrangement.

Sensing device and related operating methods

In response to a reset condition, the state of a steady-state signal at an I/O pin of the serial communication port of an integrated circuit die is determined. The serial communication port is configured to support one of the plurality of serial communication protocols based upon the detected steady-state condition.

Method to configure serial communications and device thereof

The circuit includes: a transistor ; and a switch coupled to a backgate of the transistor for switching between a power supply node and current-path node of the transistor to prevent a voltage on the backgate from dropping below the voltage on the current-path node.

Eliminating power-down popping in audio power amplifiers

Growing community of inventors

Madison, MS, United States of America

Kevin R Fugate