Qualcomm Incorporated

Kevin Patrick Caffey

Reynante Tamunan Alvarado

Lizabeth Ann Keser

Damion B Gastelum

Gene Hyde McAllister

Steve Joseph Bezuk

Christine Sung-An Hau-Riege

Anthony Thomas Newman

You-Wen Yau

A carrier tape may include a tape, a plurality of pockets, and a plurality of vents in each of the plurality of pockets. The plurality of vents may provide a vapor egress path for vapor that may occur during a dry bake process of the carrier tape.

Vented carrier tape

Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.

Stacked redistribution layers on die

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Cardiff by the Sea, CA, United States of America

Kevin Patrick Caffey