Qinetiq Limited

Kevin Michael Brunson

Mark Edward McNie

Andrew Maxwell Scott

David O King

Keith Loder Lewis

David J Combes

David James Hamilton

Ian Charles Sage

Charles Thomas Elliott

Timothy Ashley

Timothy Ingram Cox

Timothy Jonathan Phillips

Christopher William Slinger

Neil Thomson Gordon

John Henry Jefferson

Gilbert William Smith

Kevin Dennis Ridley

Norman J Geddes

Robert John Tremayne Bunyan

Carl J Anthony

Michael J Uren

Philip D Buckle

David J Jackson

Russell A Noble

Robert J T Bunyan

A retro-reflective identification tag capable of modulating an optical signal whereby to support bi-directional communication with an associated remote optical interrogation device. The tag comprises a MOEMS modulating layer over a retro-reflective substrate, giving the tag a wide angle of effective operation. The tag modulator may optionally be switched on only responsive to detection of a precursor beam from the interrogation system in order to save power. The interrogation device may make use of multiple optical wavelengths for communicating with the tag.

Dynamic optical reflector and interrogation system

A micro-opto-electro-mechanical systems (MOEMS) electro optical modulator () having an electrically tuneable optical resonator comprising an asymmetric Fabry-Perot etalon incorporating a mirror () resiliency biased with respect to a substrate () and moveable in relation thereto in response to a voltage applied there-between. The optical modulator () is capable of modulating electromagnetic radiation having a plurality of wavelengths. The modulator is adapted to modulate the transmission of short wave infrared radiation (SWIR), medium wave infrared radiation (MWIR) and long wave infrared radiation (LWIR) and the reflection of visible radiation. A spatial optical modulator having a plurality of said MOEMS optical modulators (). A method of addressing said spatial optical modulator.

Optical modulator

An optical modulator comprising a spacing-controllable etalon having at least one sprung micro-mirror suspended above a substrate. At least one electrically insulating stop is provided between the micro-mirror and the substrate to avoid short-circuit when the micro-mirror is drawn towards the substrate by an applied voltage. An optical detector detects the time of arrival of a first laser pulse. A control circuit predicts from this an arrival time of the next incident laser pulse and, responsive to a control signal, either retains the micro-mirror in its pulled-down state held against the insulating stops or releases the micro-mirror at a time predicted to maximise or minimise the light transmitted through the modulator. After a time interval calculated to permit a predetermined number of mechanical oscillations, the micro-mirror is pulled back down onto the stops.

Optical modulation

A molecular single electron transistor (MSET) detector device () is described that comprises at least one organic molecule () connecting a drain electrode () and a source electrode (). In use, said at least one organic molecule () provides a quantum confinement region. At least one analyte receptor site () is provided in the vicinity of said at least one organic molecule () that bind molecules of interest (analytes). A fluid analyser () is also described that includes the MSET detector, a pre-concentrator () and a fluid gating structure (). The fluid gating structure () is arranged to selectively route fluid from the pre-concentrator () to either one of the detector () and an exhaust port (). The pre-concentrator (), fluid gating structure () and detector () are each formed as substantially planar layers and arranged in a stack or cube.

Molecular single electron transistor (MSET) detector device

A magnetic field sensor device () is described that comprises an oscillatory member () and current control means (). The current control means () is arranged to pass an alternating current (AC) along at least first () and second () current paths provided through the oscillatory member () and is arranged to provide magnetic gradiometer mode operation (i.e. to measure magnetic field gradient) in which current flow through the first current path () is in substantially the opposite direction to current flow through the second current path (). The current control means () can also prove magnetometer mode operation (i.e. to measure magnetic field strength). The magnetic field sensor () may be used in a compass.

Combined magnetic field gradient and magnetic field strength sensor

A micro electromechanical system (MEMS) switch includes a fixed contact () and a moveable contact () on an armature (). The switch has electrodes () associated with both the fixed and moveable contacts for providing an electrostatic switch operation and piezoelectric material with associated electrodes () for bending the armature upon application of an electric voltage and providing an initial piezoelectric switch operation followed by electrostatic switching and clamping. The armature is of curved shape which is bent away from the fixed contact when in a switch open condition with zero applied voltage. This gives a large, e.g. 3 pm, switch gap in an OFF state which is reduced by piezoelectric operation suitable for electrostatic switch closing. A curved condition is provided by varying strain across the armature thickness, and is produced during manufacture of the switch.

Micro electromechanical system switch

A resonant magnetometer comprises a substrate having a member and circuitry for passing an alternating current (AC) through the member. The magnetometer is characterized in that a driver is also provided to impart a magnetic field independent oscillatory force to the member. Disclosed is a micro-electro mechanical systems (MEMS) implementation of a magnetometer.

Resonant magnetometer device

A MEMS incorporating a sensing element and a JFET electrically connected to the sensing element is fabricated by the steps of: forming a first layer of electrically insulating barrier material on a surface of a substrate; patterning the first layer so as to expose a first region of the substrate; doping by ion implantation the first region of the substrate to form a well region of the JFET; forming a second layer of barrier material on the surface of both the first layer and the first region of the substrate; patterning the barrier material so as to expose a part of the first region of the substrate; doping by ion implantation the exposed part of the first region of the substrate to form source and drain contact areas of the JFET; patterning the barrier material so as to expose a second region of the substrate; and doping by ion implantation the second region of the substrate to form gate and substrate contact areas of the JFET in a single implantion step. The monolithic integration of the JFET with the MEMS enables the bond wires for interconnecting the sensing element and the associated sensing electronic circuitry to be provided only after the buffering stage of such circuitry. This means that the bond wires interconnecting the buffering stage and the remainder of the circuitry are connected to a low impedance node which is less sensitive to noise and parasitic capacitive loading. Thus greater detection accuracy can be achieved by virtue of the fact that the parasitic capacitances are reduced to a minimum.

Method of fabricating micro-electromechanical systems

A micro-electromechanical system (MEMS) comprises a substrate incorporating an oscillatory ring, forcing electrodes for driving the ring into resonance, and sensing electrodes providing an electrical output signal dependent on oscillation of the ring as a result of such forcing and any externally applied force. A positive feedback circuit is provided for feeding back a signal dependent on the output signal of the sensing electrodes to the forcing electrodes in order to sustain oscillation of the ring. The use of positive feedback to drive the forcing electrodes in order to sustain oscillation of the ring is highly advantageous in such an application since it produces a system which exhibits very low phase noise of a magnitude considerably less than the phase noise experienced in use of a phase-lock loop circuit to sustain oscillation.

Micro-electromechanical systems

An infra-red detector ( ) comprises a detector region ( ) and a collector region separated by a barrier region. Operation of these regions is controlled by potentials applied to respective gate electrodes ( ), insulated from the detector, barrier and collector regions by an insulating oxide layer ( ). The detector, barrier, and collector regions may be arranged on a silicon substrate ( ). In operation, photo-excited electrons are generated in the detector region and these cross the barrier region for readout from the collector region.

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Malvern, United Kingdom

Kevin Michael Brunson