Qorvo Us, Inc.

Qorvo Biotechnologies, LLC

Kevin McCarron

Rio Rivas

John Belsick

Matthew Wasilik

Rick Morton

David Doerr

Methods of fabricating a bulk acoustic wave resonator structure for a fluidic device. The methods can include a first step of disposing a first conductive material over a portion of a first surface of a substrate to form at least a portion of a first electrode, the substrate having a second surface opposite the first surface. Then, a piezoelectric material may be disposed over the first electrode. Next, a second conductive material can be disposed over the piezoelectric material to form at least a portion of a second electrode. The second conductive material extends substantially parallel to the first surface of the substrate and the second conductive material at least partially extends over the first conductive material. The overlapping region of the first conductive material, the piezoelectric material, and the second conductive material form a bulk acoustic wave resonator, the bulk acoustic wave resonator having a first side and an opposing second side. An acoustic energy management structure is then disposed over a first side of the bulk acoustic wave resonator. Next a third conductive material is disposed over a portion of the second conductive material that extends beyond the bulk acoustic wave resonator, wherein the third conductive material forms an interconnect extending above the acoustic energy management structure in a direction substantially perpendicular to the first surface of the substrate. Finally a portion of the second surface of the substrate is removed to expose a chemical mechanical connection at the first electrode at a second side of the bulk wave acoustic resonator. Devices formed thereby are also included.

Acoustic resonator device

A bulk acoustic wave sensor includes a delay layer. The sensor includes an acoustic mirror and a base resonator. The base resonator includes a piezoelectric layer and two electrodes. One or more delay layers are disposed adjacent to the base resonator. A delay layer may be disposed between the base resonator and the acoustic mirror, a delay layer may be disposed on the base resonator opposite to the acoustic mirror, or both. Each delay section is formed of high quality-factor material. The sensor may define a resonant frequency, and the thickness of each delay section may be an integer multiple of half-wavelengths of the resonant frequency.

Bulk acoustic wave sensor having an overmoded resonating structure

Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and (ii) change in frequency of a phase that is correlated to temperature. Operational configuration methods include determination of an initial phase response of a BAW resonator in which temperature coefficient of frequency is zero, followed by comparison of sensitivity to a level of detection threshold for a phenomenon of interest.

Temperature compensation and operational configuration for bulk acoustic wave resonator devices

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Acoustic resonator structure with inclined C-axis piezoelectric bulk and crystalline seed layers

Methods for fabricating acoustic structure with inclined c-axis piezoelectric bulk and crystalline seed layers

Multi-stage deposition system for growth of inclined c-axis piezoelectric material structures

Multiple bulk acoustic wave (BAW) resonator structures are arranged along opposing surfaces of a fluidic passage arranged to receive a fluid. At least one resonator structure may be overlaid with functionalization (e.g., specific binding or non-specific binding) material to bind one or more analytes contained in the fluid. Combinations of BAW resonators providing dominant shear response for detection, and providing dominant longitudinal response for mixing or analyte movement, may be provided on one or more surfaces bounding a fluidic passage. Embodiments may reduce the footprint of multi-resonator fluidic device, enhance analyte binding rate, and/or enhance mixing of sample constituents.

Fluidic device including BAW resonators along opposing channel surfaces

A sensing system utilizes a channel, a BAW resonator structure including piezoelectric material with a c-axis having an inclined orientation, at least one functionalization material arranged over an active region of the BAW resonator structure, and a driving circuit configured to apply AC signals at different frequencies to cause the piezoelectric material to selectively exhibit a dominant shear response or a dominant longitudinal response. Driving the piezoelectric material in longitudinal mode induces localized fluid mixing proximate to the active region, whereas driving in shear mode permits detection of analyte bound to the at least one functionalization material in a liquid environment. Recesses may be defined in a surface of a top side electrode to enhance longitudinal mode mixing.

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Bend, OR, United States of America

Kevin McCarron