Lam Research Corporation

Novellus Systems Incorporated

Kevin Madrigal

Shawn M Hamilton

Harald Te Nijenhuis

Jonathan David Mohn

Jeffrey E Lorelli

Colin F Smith

Edward Sung

Alan M Schoepp

Kaihan Abidi Ashtiani

Ramkishan Rao Lingampalli

Hsiang-yun Lee

Frances Katherine Zelaya

An improved vaporizer for vaporizing a liquid precursor is provided. The vaporizer may include one or more channels with a relatively large wall-area-to-cross-sectional-flow-area ratio and may be equipped with one or more heater elements configured to heat the channels above the vaporization temperature of the precursor. At least some of the channels may be heated above the vaporization temperature but below the Leidenfrost temperature of the precursor. In some implementations, a carrier gas may be introduced at high speed in a direction generally transverse to the precursor flow to mechanically shear the precursor into droplets. Multiple vaporizers may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.

Configurable liquid precursor vaporizer

A heated filter assembly for heating gas supplied to a substrate processing system includes a housing defining a cavity, an inner surface and an outer surface. A filter element is arranged inside the cavity of the housing with an outer surface thereof in a spaced relationship relative to the inner surface of the housing. A heat transfer element is arranged inside of the filter element and includes an outer surface and an inner cavity. A plurality of projections is arranged on the outer surface of the heat transfer element in direct physical contact with an inner surface of the filter element. A plurality of portions is arranged on the outer surface of the heat transfer element, is spaced from the inner surface of the filter element and is located between the plurality of projections.

Internally heated porous filter for defect reduction with liquid or solid precursors

Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.

Dual-plenum showerhead with interleaved plenum sub-volumes

Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0&#xb0; C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10&#xb0; C. or higher than the wafer temperature.

System and apparatus for flowable deposition in semiconductor fabrication

A semiconductor processing gas flow manifold is provided that allows for the gas flow characteristics of the manifold gas flow paths to be individually adjusted outside of a semiconductor processing chamber. The gas flow manifold may be connected to a process gas dispersion device inside the semiconductor processing chamber. The process gas dispersion device may have multiple gas flow channels, each channel separately connected to a manifold gas flow path and targeted at a region on the semiconductor wafer. The adjustment of the individual manifold gas flow paths may vary the amount of process gas dispersed through each process gas dispersion gas flow channel onto the corresponding region of the semiconductor wafer.

Apparatus and method for improving wafer uniformity

Variable showerhead flow by varying internal baffle conductance

Growing community of inventors

Santa Cruz, CA, United States of America

Kevin Madrigal