Alliance for Sustainable Energy, LLC

Wisconsin Alumni Research Foundation

Rochester Institute of Technology

Kevin Louis Schulte

Aaron Joseph Ptak

John David Simon

Thomas Francis Kuech

David Levi Young

Luke J Mawst

Myles Aaron Steiner

Asegun Sekou Henry

Ryan Matthew France

Daniel Joseph Friedman

Brian T Zutter

Tae Wan Kim

Elisabeth Lynne Mcclure

Wondwosen Tilahun Metaferia

Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.

Nitrogen-enabled high growth rates in hydride vapor phase epitaxy

The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.

Metamorphic two-junction photovoltaic devices with removable graded buffers

The present disclosure relates to a method that includes contacting a surface of a first layer that includes a Group III element and a Group V element with a gas that includes HCl, where the first layer is positioned in thermal contact with a wafer positioned in a chamber of a reactor, and the contacting results in a roughening of the surface.

Light scattering structures for thin-film solar cells and methods of making the same

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Hydride enhanced growth rates in hydride vapor phase epitaxy

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 &#x3bc;m/minute.

High throughput semiconductor deposition system

Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., &#x3e;20 &#x3bc;m) and relatively thick growth substrates (e.g., &#x3e;0.5 mm).

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Denver, CO, United States of America

Kevin Louis Schulte