E Ink Corporation

Xenotrancorp.

Kevin L Denis

Peter T Kazlas

Yu Chen

Karl Raymond Amundson

Gregg Michael Duthaler

Andrew P Ritenour

Paul Stephen Drzaic

Guy Danner

Nathan R Kane

Joseph M Jacobson

Robert Waverly Zehner

Charles Howie Honeyman

Jianna Wang

Matthew A King

A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.

Processes for forming backplanes for electro-optic displays

A backplane for an electro-optic display comprises a pixel electrode (), a voltage supply line (C) arranged to supply a voltage to the pixel electrode (), and a micromechanical switch () disposed between the voltage supply line (C) and the pixel electrode (), the micromechanical switch () having an open state, in which the voltage supply line (C) is not electrically connected to the pixel electrode (), and a closed state, in which the voltage supply line (C) is electrically connected to the pixel electrode ().

Backplanes for electro-optic displays

A thin-film transistor includes a gate electrode having first and second gate electrode edges on opposed sides, and a drain electrode having a first edge that overlaps the first gate electrode edge, and a second edge that overlaps the second gate electrode edge. A diode array is fabricated by successive deposition of a conductive layer, a doped semiconductor layer and an undoped semiconductor layer adjacent to the substrate. A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line. Another display pixel unit provides reduced pixel electrode voltage shifts using a source line and a balance line.

Backplanes for display applications, and components for use therein

Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300&#xb0; C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.

Process for fabricating thin film transistors

A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The unit includes a transistor, the pixel electrode, and the source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line.

A non-contacting sensor based on inductive coupling for detecting failure initiation, and crack propagation in composite materials is disclosed. A very low cost crack sensing transducer or test pattern that can be imbedded into a structural material, interrogated, and powered wirelessly is described. A detection method for interrogating the crack sensor utilizing RF inductive coupling is disclosed. The proposed sensor consists of minimal components resulting in maximum reliability.

Non-contacting crack sensor

Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300&deg; C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.

Growing community of inventors

Bowie, MD, United States of America

Kevin L Denis