Intevac, Inc.

Eotech, Inc.

Kevin James Roderick

Kenneth A Costello

Verle Aebi

Edward Yin

Douglas Fowler

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

Compact proximity focused image sensor

An image intensifier and a method of fabrication are disclosed. The image intensifier contains a photocathode assembly () including a vacuum window to generate photoelectrons in response to light, a vacuum package () and an anode assembly () to receive the photoelectrons. The anode assembly is mounted to the vacuum package via a compliant, springy, support structure (). The anode additionally includes one or more insulating spacers () on the surface facing the photocathode so as to precisely index the position of the anode assembly with respect to the photocathode surface. The photocathode and vacuum window assembly is pressed into the vacuum package to generate a sealed leak tight vacuum envelope. During the photocathode assembly to vacuum package assembly pressing operation, the inner surface of the photocathode assembly contacts the insulating spacer/spacers of the anode assembly, thereby compressing the compliant support structure. This structure and assembly method result in a precisely indexed photocathode to anode assembly sealed image intensifier.

Image intensifier with indexed compliant anode assembly

An image sensor is disclosed that includes a solid state semiconductor imager having a metallized catch pad, a collimator having a metallized layer that faces a sensor anode, the metallized layer joined with the metallized catch pad to form a metal bond between the solid state semiconductor imager and the collimator. Methods of making the joined solid state semiconductor imager and collimator assembly are also disclosed.

Collimator bonding structure and method

There is described-novel bonding and interconnecting techniques for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.

Semiconductor die attachment for high vacuum tubes

There is described novel bonding and interconnecting techniques for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.

Growing community of inventors

Santa Clara County, CA, United States of America

Kevin James Roderick