Motorola Corporation

Other

Freescale Semiconductor,inc.

Kevin J Nordquist

William J Dauksher

Wei E Wu

Curtis D Moyer

Jaynal Abedin Molla

Douglas J Resnick

Bernard J Roman

David P Mancini

Robert H Reuss

Steven A Voight

David W Jacobs

Jeffrey H Baker

Peter A Smith

Kathleen Anne Tobin

Cesar M Garza

Doug J Resnick

Pawitter J S Mangat

Troy A Trottier

Diane A Carrillo

A lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template is provided. The lithographic template () and the method of making comprises forming a transparent conductive layer () over a substrate (). A SiCN layer () is formed over the transparent conductive layer (), and a patterning layer () formed on the SiCN layer (). The SiCN layer () is converted to an SiOlayer by applying an Oplasma (). The SiOlayer prevents damage to the transparent conductive layer () during cleaning and provides a binding mechanism for the imprint release coating.

Lithographic template and method of formation and use

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template () is formed having a relief structure () and a repaired gap defect () within the relief structure (). The template () is used in the fabrication of a semiconductor device () for affecting a pattern in device () by positioning the template () in close proximity to semiconductor device () having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template () is then removed to complete fabrication of semiconductor device ().

Lithographic template having a repaired gap defect method of repair and use

A semiconductor device is formed by patterning a resist layer using a rim phase shifting mask. A multilayer or single patterning layer to form the different phase-shifting regions and opaque regions is used to manufacture the rim phase shifting mask. First phase shifting regions are formed by transferring an opening in the multilayer or single patterning layer through an opaque layer and a transparent substrate. At least portions of the same multilayer or single patterning layer are used to recess the opaque layer a predetermined distance to form rims (second phase shifting regions). The first phase-shifting regions phase shift the light traveling through them 180 degrees relative to the light traveling through the rims, thereby increasing the contrast of the light traveling through the rim phase shifting mask.

Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( ) is formed having a substrate ( ) and a template pedestal ( ) having formed thereon an uppermost surface an etched pattern or relief image ( ). The template ( ) is used in the fabrication of a semiconductor device ( ) for affecting a pattern in the device ( ) by positioning the template ( ) in close proximity to semiconductor device ( ) having a radiation sensitive material ( ) formed thereon and applying a pressure ( ) to cause the radiation sensitive material ( ) to flow into the relief image ( ) present on the template ( ). Radiation ( ) is then applied through the template ( ) so as to further cure portions of the radiation sensitive material ( ) and further define the pattern in the radiation sensitive material ( 0). The template ( ) is then removed to complete fabrication of semiconductor device ( ).

A field emission device (100, 150) includes a cathode plate (102, 180) having electron emitters (116), an anode plate (104, 170) having a phosphor (107, 207, 307, 407) activated by electrons (119) emitted by electron emitters (116), and a vacuum bridge focusing structure (118, 158, 218, 318) for focusing electrons (119) emitted by electron emitters (116). Vacuum bridge focusing structure (118, 158, 218, 318) has landings (121, 122, 221, 322), which are attached to cathode plate (102, 180), and further has bridges (120, 220, 320), which extend above and beyond landings (121, 122, 221, 322, 421) to provide a self-supporting structure that is spaced apart from cathode plate (102, 180).

Field emission device having a vacuum bridge focusing structure and

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Gold Canyon, AZ, United States of America

Kevin J Nordquist