Avago Technologies General IP (singapore) Pte. Ltd.

Qxonix Inc.

Avago Technologies International Sales Pte. Limited

Agilent Technologies, Inc.

Qxoniix Inc.

Kevin J Grannen

Dariusz Burak

John Choy

Jack Lenell

Phil Nikkel

Chris Feng

Tina L Lamers

John Dwight Larson, Iii

Carrie A Rogers

Tangshiun Yeh

Paul D Bradley

Alexandre Shirakawa

Stefan Bader

Qiang Zou

Ivan Ionash

Donald Lee

Hongjun Feng

Urupattur C Sridharan

Kristina Lamers

Steve Gilbert

Tom Yeh

Techniques for improving acoustic wave device structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The first and second layers of piezoelectric material have respective thicknesses so that the acoustic wave device has a resonant frequency that is in a super high frequency band or an extremely high frequency band.

Acoustic devices, structures and systems

Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material having a first piezoelectric axis orientation. The bulk acoustic wave (BAW) resonator may comprise a multi-layer acoustic reflector, e.g., a multi-layer metal top acoustic reflector electrode, including a first pair of top metal electrode layers. The first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite a piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator.

Structures, acoustic wave resonators, devices and systems

Techniques for improving structures, acoustic wave resonators, layers, and devices are disclosed, including filters, oscillators and systems that may include such devices. An acoustic wave device of this disclosure may comprise a substrate and a piezoelectric resonant volume. The piezoelectric resonant volume of the acoustic wave device may have a main resonant frequency. The acoustic wave device may comprise a first distributed Bragg acoustic reflector. The first distributed Bragg acoustic reflector may comprise a first active piezoelectric layer. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in a super high frequency (SHF) band. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in an extremely high frequency (EHF) band.

Structures, acoustic wave resonators, layers, devices and systems

Techniques for improving acoustic resonators and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate. The bulk acoustic wave (BAW) may further comprise a plurality of piezoelectric layers including first, second, third and fourth piezoelectric layers acoustically coupled with one another and arranged over the substrate. The first, second, third and fourth piezoelectric layers may have respective piezoelectric axis orientations. The first, second, third and fourth piezoelectric layers may have respective thicknesses. Electromechanical coupling of the bulk acoustic wave (BAW) resonator may, but need not be limited.

Layers, structures, acoustic wave resonators, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.

Bulk acoustic wave resonator with patterned layer structures, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The resonant frequency of the BAW resonator may be in a super high frequency band or an extremely high frequency band.

Bulk acoustic wave (BAW) reflector and resonator structures, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector including a first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.

Bulk acoustic wave (BAW) resonator structures, devices and systems

Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An acoustic wave device may include a substrate. The acoustic wave device may include first and second layers of piezoelectric material acoustically coupled with one another, in which the first layer of piezoelectric material has a first piezoelectric axis orientation, and the second layer of piezoelectric material has a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The acoustic wave device may include an interposer layer interposed between the first and second layers of piezoelectric material. The interposer may facilitate an enhancement of an electromechanical coupling coefficient of the acoustic wave device.

Acoustic devices with layer structures, devices and systems

Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electrical may having a first filter band in a Super High Frequency (SHF) band or an Extremely High Frequency (EHF) band to facilitate compliance with a regulatory requirement or a standards setting organization specification. For example, the first electrical filter may comprise a notch filter having a notch band overlapping at least a portion of an Earth Exploration Satellite Service (EESS) band to facilitate compliance with a regulatory requirement or the standards setting organization specification for the Earth Exploration Satellite Service (EESS) band.

Acoustic devices structures, filters and systems

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of doped piezoelectric layer material and a second layer of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of doped piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector including a first pair of metal electrode layers may be electrically and acoustically coupled with the first layer of doped piezoelectric material and the second layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.

Doped acoustic wave resonator structures, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided.

Temperature compensating bulk acoustic wave (BAW) resonator structures, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a mass load layer to facilitate a preselected frequency compensation in the resonant frequency.

Mass loaded bulk acoustic wave (BAW) resonator structures, devices, and systems

Acoustic device structures, devices and systems

Bulk acoustic wave (BAW) resonator with patterned layer structures, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including fluidic systems, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material. The bulk acoustic wave (BAW) resonator may comprise a top electrode. A sensing region may be acoustically coupled with the top electrode of the bulk acoustic wave (BAW) resonator.

Growing community of inventors

Thornton, CO, United States of America

Kevin J Grannen