Synopsys, Inc.

Kevin Hooker

Thomas Christopher Cecil

Lawrence S Melvin, Iii

Marco Guajardo

A system uses machine learning models, such as neural networks for generating mask design from a circuit design. The machine learning models have inputs and outputs which are localized to a small region of the circuit design. The machine learning model takes as input features describing the circuit design in the neighborhood of a location and generates an offset distance as output. The system uses the offset distance to generate features of the mask design, for example, main features or assist features corresponding to a circuit design polygon. The system may use the offset distance for target optimization by modifying the circuit design polygon to obtain a circuit design polygon that has improved manufacturability.

Neural network based mask synthesis for integrated circuits

A system generates a mask for a circuit design while enforcing symmetry and consistency across random areas of the mask. The system builds a mask solutions database mapping circuit patterns to mask patterns. The system uses the mask solutions database to replace circuit patterns of the circuit design with mask patterns. The system identifies properties in circuit patterns of the circuit design and enforces the same property in the corresponding mask patterns. Examples of properties enforced include symmetry within circuit patterns and similarity across circuit patterns. The system combines mask patterns in different regions of the circuit and resolves conflicts that occur when there are multiple masks within a region.

Enforcing mask synthesis consistency across random areas of integrated circuit chips

Aspects described herein relate to mask synthesis using design guided offsets. A target shape on an image surface to be fabricated using a mask based on a design of an integrated circuit is obtained. Rays are generated emanating from respective anchor points. The anchor points are on a boundary of the target shape or a boundary of a mask shape of the mask. For each ray of the rays, a distance is defined between a first intersection of the respective ray and the boundary of the target shape and a second intersection of the respective ray and the boundary of the mask shape. An analysis is performed by one or more processors, where the analysis is configured to modify the distances based on an error between the target shape and a resulting shape simulated to be on the image surface resulting from the mask shape.

Mask synthesis using design guided offsets

A lithography process is described by a design for a lithographic mask and a description of the lithography configuration, which may include the lithography source, collection/illumination optics, projection optics, resist, and/or subsequent fabrication steps. The actual lithography process uses a lithographic mask fabricated from the mask design, which may be different than the nominal mask design. A mask fabrication model models the process for fabricating the lithographic mask from the mask design. Typically, this is an electron-beam (e-beam) process, which includes e-beam exposure of resist on a mask blank, processing of the exposed resist to form patterned resist, and etching of the mask blank with the patterned resist. The mask fabrication model, usually in conjunction with other process models, is used to estimate a result of the lithography process. Mask correction is then applied to the mask design based on the simulation result.

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Kevin Hooker