Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Kevin Guilloy

Alexei Tchelnokov

Vincent Reboud

Vincent Calvo

Alban Gassenq

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Method of production of a semiconducting structure comprising a strained portion

The invention pertains to formation of a semiconducting portion () by epitaxial growth on a strained germination portion (), comprising the steps in which a cavity () is produced under a structured part () by rendering free a support layer () situated facing the structured part (), a central portion (), termed the strained germination portion, then being strained; and a semiconducting portion () is formed by epitaxial growth on the strained germination portion (), wherein the structured part () is furthermore placed in contact with the support layer () in such a way as to bind the structured part () of the support layer.

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Grenoble, France

Kevin Guilloy