Applied Materials, Inc.

Other

Kevin Griffin

Joseph Yudovsky

Mario Dave Silvetti

Kenneth Brian Doering

Mandyam Sriram

Joseph F AuBuchon

Garry K Kwong

Tai T Ngo

Sanjeev Baluja

Hanhong Chen

Ning Li

Kaushal Gangakhedkar

Abraham Ravid

Steven D Marcus

Alex Minkovich

Somesh Khandelwal

Kenneth S Collins

Srinivas Gandikota

John C Forster

Kelvin Chan

Kartik Bhupendra Shah

Hari K Ponnekanti

Yihong Chen

Dmitry A Dzilno

Jared Ahmad Lee

Karthik Ramanathan

Chaowei Wang

Ren Liu

Li-Qun Xia

Gregory J Wilson

Kallol Bera

Todd J Egan

Maitreyee Mahajani

Yi-Chiau Huang

Muhannad Mustafa

Tejas Ulavi

Kenric T Choi

Dhritiman Subha Kashyap

Abhishek Chowdhury

Cong Trinh

Chi-Chou Lin

Alexander Viktorovich Garachtchenko

Ravi Jallepally

Hao Zhang

Maribel Maldonado-Garcia

Brendan McDougall

Robert T Trujillo

Guangwei Sun

Timothy Ryan Dexter

Andrew C Sherman

Santhoshkumar Doddegowdanapalya Nanjundegowda

Somashekhar Kosthi

Abhijit Ghosh

Zohreh Razavi Hesabi

Zhejun Zhang

Vipin Jose

Saloni Sawalkar

Kendrick H Chaney

Rohit Ode

Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.

Plasma showerhead assembly and method of reducing defects

Heaters having a body with having a top and bottom comprising pyrolytic boron nitride (PBN), a first heater electrode and a second heater electrode are described. The heater electrodes can be enclosed within an electrically insulating standoff and connected to separate busbars to provide power. Heater assemblies including one or more of the heaters and processing chambers including the heater assemblies are also described.

PBN heaters for ALD temperature uniformity

Plasma showerheads with improved gas uniformity, and a plasma showerhead with angled gas nozzles are disclosed. Also disclosed are gas nozzles having a vertical offset angle and/or a directional offset angle. None of the gas channels and/or the gas nozzles intersect with the plasma regions of the showerhead.

Plasma showerhead with improved uniformity

An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

Control of liquid delivery in auto-refill systems

Pedestal assemblies, purge rings for pedestal assemblies, and processing methods for increasing residence time of an edge purge gas in heated pedestal assemblies are described. Purge rings have an inner diameter face and an outer diameter face defining a thickness of the purge ring, a top surface and a bottom surface defining a height of the purge ring, and a thermal expansion feature. Purge rings comprise a plurality of apertures extending through the thickness and aligned circumferentially with a plurality of circumferentially spaced purge outlets in a substrate support.

Purge ring for pedestal assembly

Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Enhanced spatial ALD of metals through controlled precursor mixing

Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Gas separation control in spatial atomic layer deposition

Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

Methods for controlling a flow pulse shape

Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

Apparatus and methods for improving chemical utilization rate in deposition process

Gas injector inserts having a wedge-shaped housing, at least one first slot and at least one second slot are described. The housing has a first opening in the back face that is in fluid communication with the first slot in the front face and a second opening in the back face that is in fluid communication with the second slot in the front face. Each of the first slot and the second slot has an elongate axis that extends from the inner peripheral end to the outer peripheral end of the housing. The gas injector insert is configured to provide a flow of gas through the first slots at supersonic velocity. Gas distribution assemblies and processing chambers including the gas injector inserts are described.

Gas distribution assembly for improved pump-purge and precursor delivery

Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

Machine learning based smart process recipe builder to improve azimuthal flow and thickness uniformity

Apparatus and methods for lifting loads are described. The load lift includes a support frame and a lift assembly with main cylinder and at least one standby cylinder connecting a rotatable cross beam with a clamp plate. A rotary actuator assembly is connected to the lift beam to move the lift assembly out of the way while not in use by rotating the lift assembly from a lift position to a standby position.

Fail-safe pneumatic lift system

Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

Injector for batch processing and methods of use

Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Position and temperature monitoring of ALD platen susceptor

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Livermore, CA, United States of America

Kevin Griffin