Motorola Corporation

Fsi International, Inc.

Kevin G Kemp

Bernard J Roman

Daniel Jason Williams

Joseph W Daggett

Keith H Armstrong

Joseph W Cayton

Papu D Maniar

Robert W Fiordalice

Bradley Paul Smith

Percy V Gilbert

Subramoney V Iyer

Matthew A Thompson

Natarajan Ramanan

Faqiu (Frank) Liang

Rajive Dhar

A liquid coating device and method for coating a coatable composition on a workpiece to form a coating, wherein a parameter indicative of barometric pressure is measured and at least one thickness-affecting process parameter is adjusted in order to compensate for the effects of variations in barometric pressure on coating thickness uniformity.

Liquid coating device with barometric pressure compensation

A rotary peristaltic pump that can supply fluids accurately at desired flow rates and with the desired control over pulsations normally experienced when using peristaltic pumps. The control is provided, in one aspect, by varying the radius of the shell against which the compression devices act to deform the tubing. In another aspect, the torque needed to turn the rotor is equalized throughout the rotation of the rotor to further enhance the flow rate accuracy of the pump. Torque equalization is preferably enhanced by use of a torque control cam positioned about the rotor.

Peristaltic pump with flow control

Systems and methods that make it possible to rapidly cycle a workpiece through a temperature/time profile over a wide temperature range, e.g., 0.degree. C. to 350.degree. C., without having to lift and transfer the workpiece between separate baking and chilling mechanisms. The present invention is based in part upon the concept of using a low thermal mass, thermally conductive heating member to support a workpiece, such as a microelectronic device, during both baking and chilling operations. While supporting the workpiece on one surface, the other surface of the heating member can be brought into and out of thermal contact with a relatively thermally massive chill plate to easily switch between baking and chilling operations. A simple mechanism is all that is required to either physically separate the heating member and chill plate to accomplish the most rapid heating, or the simple mechanism adjoins the heating member and chill plate to accomplish the most rapid chilling. This approach completely eliminates the need to rely upon a workpiece handling mechanism in order to lift and transfer a microelectronic device from a heating member to a separate chill plate. This approach also allows both chilling and baking to occur from a direction below the microelectronic device.

Combination bake/chill apparatus incorporating low thermal mass,

A pattern of dummy structures (20) is added to the layout pattern of an integrated circuit (10) to equilibrate the polishing rate across the surface of a semiconductor substrate (11). The location of each dummy structure (20) is predetermined so that it does not intersect a well boundary (17) or an active region (21,27), and does not fall under a conductive material such as a layer of polysilicon (22,28) or an interconnect structure (23,29).

Integrated circuit having a dummy structure and method of making

An anti-reflective coating (ARC) (20) is formed over a reflective, conductive layer (18), such as polysilicon or aluminum, in a semiconductor device (10). The ARC is an aluminum nitride layer. During photolithography, the ARC absorbs radiation waves (30), particularly absorbing wavelengths under 300 nanometers, such as deep ultraviolet (DUV) radiation at 248 nanometers. Being absorbed by the ARC, the radiation waves are prevented from reflecting off the underlying conductive layer. Thus, resist mask (34) is patterned and developed true to the pattern on lithography mask (24), resulting in accurate replication into appropriate layers of the device.

Method for making a semiconductor device having anti-reflective coating

A lithographic method using double exposures, physical mask shifting, and light phase shifting is used to form masking features on a substrate masking layer. A first phase shifting mask (11) is placed in a first position adjacent a substrate (10). The substrate (10) is covered by the masking layer. The masking layer is exposed to light, or an equivalent energy source, through the first mask (11) to form a first plurality of unexposed regions of the masking layer. Either a second mask or the first mask (11) is placed adjacent the substrate (10) in a second position which is displaced from the first position in an X direction, a Y direction, and/or a rotational direction. A second exposure is used to form a second plurality of unexposed regions of the masking layer. The first and second pluralities of unexposed regions have common unexposed regions which are used to form the masking features.

Lithographic method using double exposure techniques, mask position

Integrated circuits with small feature sizes are obtained using a phase shifting mask which has reduced back reflection and improved optical contrast. These improvements result from reduced etching of the chrome and chrome oxide layers on the phase shifting mask. In one embodiment, the phase shifting mask is formed by depositing an image reversible photoresist layer (22) which overlies the optical mask (18). Forming a first exposed region (24) and an unexposed region (26) in the image reversible photoresist layer (22). Treating the first exposed region (24) to form a hardened first exposed region. Forming a second exposed region (30) within the remaining portion of the unexposed region (26) by exposing the back surface (16) of the substrate (12) to an optical illumination source. Removing the second exposed region (30) to uncover a portion (32) of the substrate (12) and to form an etch mask (34). The uncovered portion (32) of the substrate (12) is etched to form a trench region (38).

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Dallas, TX, United States of America

Kevin G Kemp