Asml Netherlands B.v.

Motorola Corporation

Kevin D Cummings

Donis George Flagello

Alexander Straaijer

William A Johnson

Marcel Mathijs Theodore Marie Dierichs

Douglas J Resnick

Allison M Fisher

C Joseph Mogab

Hector T Chen

Daniel L Laird

Pawitter J S Mangat

A radial transverse electric polarizer device is provided. The device includes a first layer of material having a first refractive index, a second layer of material having a second refractive index, and a plurality of elongated elements azimuthally and periodically spaced apart, and disposed between the first layer and the second layer. The plurality of elongated elements interact with electromagnetic waves of radiation to transmit transverse electric polarization of electromagnetic waves of radiation. One aspect of the invention is, for example, to use such polarizer device in a lithographic projection apparatus to increase imaging resolution. Another aspect is to provide a device manufacturing method including polarizing a beam of radiation in a transverse electric polarization.

Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems

A method of using a cell library to create a device, includes projecting a series of masks, each mask of the series corresponding to a layer of each of one or more selected cells, onto a substrate according to a data layout of the device or combining a series of masks, each mask of the series corresponding to a layer of one or more of the selected cells, into a series of global masks, each of global masks of the series of global masks embodying a layer of the device according to a data layout of the device.

Certified cells and method of using certified cells for fabricating a device

A radial transverse electric polarizer device includes a substrate material having a first refractive index and a plurality of elongated azimuthally oriented elements coupled to the substrate material, the plurality of elongated elements having a second refractive index. The plurality of elements are periodically spaced apart to form a plurality of gaps such that the radial transverse electric polarizer device interacts with an electromagnetic radiation including first and second polarizations to reflect substantially all of the radiation of the first polarization and transmit substantially all of the radiation of the second polarization. The plurality of elongated elements are coated with this thin layer of absorbing material which absorbs radiation at a wavelength of the electromagnetic radiation. The polarizer device may be used, for example, in a lithographic projection apparatus to increase imaging resolution.

Attenuating phase shift masks and alternating phase shift masks provide increased resolution of the apparatus by introducing a phase shift in the radiation transmitted between adjacent features of the pattern on the mask. A phase shift mask is provided with a layer of inorganic material that is etchable. The inorganic material layer is formed on a mask blank having a glass or quartz layer and an etch stop layer. The etch stop layer provides uniform etch depth of the pattern in the inorganic material layer as the etch stop layer is formed of a material that is not etched by the etching process. The phase shift mask may be provided with a layer of attenuating material instead of the resinous inorganic polymer layer. The features of the pattern of the phase shift mask may also be filled with an optically transparent or translucent material or with an opaque material having an index of refraction and a dielectric constant selected to reduce the boundary effect at side walls of features of the pattern. A device for use in an integrated circuit, an integrated optical system, magnetic domain memories, liquid-crystal display panels, and thin-film magnetic heads may be manufactured by exposing a radiation sensitive material on a substrate to a projection beam of radiation patterned with a phase shift mask having an etch stop layer and/or a pattern filled with optically transparent or translucent material or with an opaque material.

Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects

A patterning device, for example a mask, for use in a photolithographic apparatus includes a blank layer, a layer of patterned opaque material on a surface of the blank layer and a pellicle of perfluoropolyether (PFPE) liquid that covers the surface. A method of manufacturing a patterning device includes providing a patterning device having a blank layer and a patterned layer of opaque material on a surface of the blank layer, applying PFPE liquid to the surface that covers the surface to form a PFPE liquid layer, and removing at least a portion of the PFPE liquid layer. A method of cleaning a patterning device for use in photolithographic projection apparatus, the patterning device including a blank layer and a patterned layer of opaque material on a surface of the blank layer, the method including applying PFPE liquid to the surface of the blank layer that covers the surface to form a PFPE liquid layer and removing at least a portion of the PFPE liquid layer.

Perfluoropolyether liquid pellicle and methods of cleaning masks using perfluoropolyether liquid

A lithographic mask (FIG. or FIG. ) that is primarily used for SCALPEL processing has a substrate ( ). Layers ( , and ) are formed and selectively patterned and etched to form E-beam exposure windows ( ) and skirt regions ( ) framing the windows ( ). The skirt regions ( ) and some portions of the patterned features ( ) within the window ( ) are formed having thicker/thinner regions of material or formed of different material whereby different regions of the mask (FIG. ) scatter energy to differing degrees. The different scattering regions on the mask allow SCALPEL patterns to be formed on the wafer with improved critical dimension (CD) control, reduced aberrant feature formation, and improved yield.

Method for manufacturing a semiconductor wafer using a mask that has several regions with different scattering ability

A passivating layer (,) is formed overlying portions of a mask (,). The mask (,) is used to pattern a semiconductor device substrate (,). In accordance with one embodiment of the present invention, the passivating layer (,) is removed prior to patterning the semiconductor device substrate (,). In yet another embodiment, the passivating layer (,) is cleaned prior to patterning the semiconductor device substrate (,) and then left to remain overlying portions of the mask (,) during the patterning process.

Method for forming a semiconductor device using a mask having a self-assembled monolayer

A lithographic mask (FIG. 9 or FIG. 10) that is primarily used for SCALPEL processing has a substrate (100). Layers (102, 104, 106, 108, 110, and 112) are formed and selectively patterned and etched to form E-beam exposure windows (118) and skirt regions (120) framing the windows (118). The skirt regions (120) and some portions of the patterned features (124) within the window (118) are formed having thicker/thinner regions of material or formed of different material whereby different regions of the mask (FIG. 9) scatter energy to differing degrees. The different scattering regions on the mask allow SCALPEL patterns to be formed on the wafer with improved critical dimension (CD) control, reduced aberrant feature formation, and improved yield.

Method for manufacturing a semiconductor wafer using a mask that has

A method of fabricating an X-ray mask including forming a membrane layer on a wafer and forming a layer of X-ray absorbing material on the membrane layer. A pattern is defined on the absorbing layer with positions that are predistorted in accordance with the following equations, and their extensions if desired:

Method of fabricating X-ray masks with reduced errors

A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.

Pattern writing method during X-ray mask fabrication

A uniform heating fixture and method of use is provided. A heat conductive member having a first plane surface, a second surface and a third plane surface is formed. The first plane surface and the third plane surface are parallel and are connected by a second surface. The third plane surface circumscribes and extends away from the first plane surface, thereby enabling uniform heating of an X-ray mask.

Growing community of inventors

Phoenix, AZ, United States of America

Kevin D Cummings