Motorola Corporation

Kevin B Jackson

Bernard W Boland

William E Gandy, Jr

Randall Paul Moore

A method of moderating concentration of at least highly fluorinated alkyl materials from a contaminated aqueous feed liquid containing an original composition of between 60 parts per trillion and 300 parts per billion of the at least highly fluorinated materials per liter of water into an aqueous electronic separator having at least three chambers including a feed chamber having a liquid exit port from which a mediated aqueous contaminated feed liquid exits and a liquid input port into which the contaminated aqueous feed liquid enters the feed chamber; an anodic electrode chamber filled with an aqueous anodic liquid; and a cathodic electrode chamber filled with an aqueous cathodic liquid; wherein the feed chamber is between and adjacent to the anodic electrode chamber and the cathodic electrode chamber and the feed chamber is separated from each of the anodic electrode chamber and the cathodic electrode chamber by at least one semipermeable membrane.

Apparatus and method for mediation of PFAS contamination in an environment

High voltage (200-400 volts) Zener diodes having much improved resistance to degradation under 150.degree. C. HTRB are obtained by a junction passivation comprising a thermal oxide next to the silicon, covered by a TEOS CVD glass, a CVD nitride and a further TEOS CVD glass. Multiple Zener voltages are obtained with otherwise identical, simultaneous wafer processing steps by using epi-wafers having different epi doping and thickness. Back-side lap for wafer thinning is avoided.

Semiconductor diode and method

High voltage (200-400 volts) Zener diodes having much improved resistance to degradation under 150.degree. C. HTRB are obtained by a junction passivation comprising a thermal oxide next to the silicon, covered by a TEOS CVD glass, a CVD nitride and a further TEOS CVD glass. Multiple Zener voltages are obtained with otherwise identical, simultaneous wafer processing steps by using epi-wafers having different epi doping and thickness. Back-side for wafer thinning is avoided.

Method of making a semiconductor diode

An improved monolithic, temperature compensated voltage- reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.

Monolithic temperature compensated voltage-reference diode and method

An improved monolithic, temperature compensated voltage-reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.

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Phoenix, AZ, United States of America

Kevin B Jackson