Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Keunho Lee

Ha-Young Kim

Sungwe Cho

Taejoong Song

Jae-Woo Seo

Uihui Kwon

Dalhee Lee

Hyoung-Suk Oh

Junghwan Shin

Ki-Man Park

Krishna Bhuwalka

Sangwoo Pae

KwangSun You

Zhenhua Wu

Sanga An

Yeoil Yun

Jongwook Jeon

Disclosed is a semiconductor device including a substrate with first and second regions adjacent to each other in a first direction, and first to third gate electrodes extending from the first region toward the second region. Each of the first and second regions includes a PMOSFET region and an NMOSFET region. The first to third gate electrodes extend in the first direction and are sequentially arranged in a second direction different from the first direction. The first and third gate electrodes are supplied with a first signal. The second gate electrode is supplied with a second signal that is an inverted signal of the first signal. The first gate electrode includes a first gate of the first region and a first gate of the second region. The first gates are aligned and connected with each other in the first direction.

Semiconductor device

A flip-flop includes an input interface, a first latch, a third inverter, and a second latch. The third inverter and the fifth inverter include first transistors of a first type formed between a first power contact and a second power contact supplied with a power supply voltage on first-type fins, and second transistors of a second type formed between a first ground contact and a second ground contact supplied with a ground voltage on second-type fins.

Flip-flop including 3-state inverter

A method of designing a semiconductor circuit using a circuit simulation tool executed by a computer includes calculating power consumptions of elements of the semiconductor circuit by use of the circuit simulation tool. A thermal netlist is created about the semiconductor circuit, based on the power consumptions and geometry information of each of the elements. A simulation of the semiconductor circuit is performed with the thermal netlist using the circuit simulation tool to detect a temperature of each of the elements. The thermal netlist includes thermal capacitance information of each of the elements.

Simulation system estimating self-heating characteristic of circuit and design method thereof

A display apparatus includes a display panel, a backlight unit, a bottom cover, a printed circuit board ('PCB') electrically connected to the display panel, a shield cover disposed on a lower surface of the PCB, and including a planar part on which a hook opening part is defined, and a bent part bent from the planar part to face the side wall part, and a top cover which is coupled to the bottom cover and includes a side surface part surrounding the side wall part, and a hook part extending from one end of the side surface part, inserted into the hook opening part, and coupled to the shield cover.

Display apparatus

A display device comprises: a mold frame including a support having a quadrilateral loop shape; a display panel having edge portions of a rear surface of the display panel, the edge portions being supported by the support; and a plurality of adhesive tapes disposed between the support and the display panel. The support is disposed between the plurality of adhesive tapes and has at least one protrusion protruding toward the display panel.

Display device

Provided is a finFET device. The finFET device may include an active region which protrudes vertically from a substrate, a channel region disposed on a center of the active region, a drain region disposed on one side surface of the channel region, and a source region disposed on the other side surface of the channel region, a gate insulating layer formed on two opposing side surfaces of the channel region and having a U-shaped cross-section, gate spacers formed on outer surfaces of the gate insulating layer, drain spacers formed on two opposing side surfaces of the drain region, and source spacers formed on two opposing side surfaces of the source region, and at least one of the two side surfaces of the drain region has a tapered part.

Semiconductor devices having tapered active regions

Growing community of inventors

Hwaseong-si, South Korea

Keunho Lee