Sungkyunkwan University

Samsung Electronics Co., Ltd.

Keun Young Lee

Sang Woo Kim

Sangwoo Kim

Ju-hyuck Lee

Hauk Han

Seongsu Kim

Sang-woo Kim

Sang Hyun Kim

Wan Chul Seung

Seong Su Kim

Tae Yun Kim

Wanchul Seung

Juhyuck Lee

Do Hyung Kim

Dohyung Kim

Do-hyung Kim

Jeonggil Lee

Hyun-seok Lim

Kyungwook Park

Hyunseok Lim

Ki Hyun Yoon

Hyun Seok Lim

Taisoo Lim

Jeong-gil Lee

Jeong Hwan Lee

Hong Joon Yoon

HanJun Ryu

Je-hyeon Park

Hong-joon Yoon

Jin Yeong Lee

Jeong Gil Lee

Kang Hyuck Lee

Jooyeon Ha

Sung Soo Kwak

Hey Jung Park

Tae-yong Kim

Suhyun Yoon

Gyu-cheol Yoon

Kyung Sik Shin

Han Joon Ryu

Ju Hyuck Lee

A semiconductor device includes gate electrodes and interlayer insulating layers that are alternately stacked on a substrate, channel structures spaced apart from each other in a first direction and extending vertically through the gate electrodes and the interlayer insulating layers to the substrate, and a first separation region extending vertically through the gate electrodes and the interlayer insulating layers. Each gate electrode includes a first conductive layer and a second conductive layer, the first conductive layer disposed between the second conductive layer and each of two adjacent interlayer insulating layers. In a first region, between an outermost channel structure and the first separation region, of each gate electrode, the first conductive layer has a decreasing thickness toward the first separation region and the second conductive layer has an increasing thickness toward the first separation region.

Semiconductor device and apparatus of manufacturing the same

Provided is an electrostatic energy harvester Including a lower electrode; a ferroelectric material layer which is disposed on the lower electrode and formed of a poled ferroelectric material; a friction-charged body which is adapted to be repeatedly contacted with and separated from the ferroelectric material layer and has an electric susceptibility different from an electric susceptibility of the ferroelectric material layer; and an upper electrode provided on the friction-charged body.

Energy harvester for electrostatic energy

Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a plurality of gate electrodes that are stacked on a substrate and are spaced apart from each other in a vertical direction and a channel region extending through the plurality of gate electrodes in the vertical direction. Each of the plurality of gate electrodes may include a first conductive layer defining a recess recessed toward the channel region, and a second conductive layer in the recess defined by the first conductive layer. A first concentration of impurities in the second conductive layer may be higher than a second concentration of the impurities in the first conductive layer, and the impurities may include nitrogen (N).

Semiconductor devices and method of forming the same

A semiconductor memory device may include a substrate, gate electrode structures stacked on the substrate, insulation patterns between the gate electrode structures, vertical channels penetrating through the gate electrode structures and the insulation patterns, and a data storage pattern. The vertical channels may be electrically connected to the substrate. The data storage pattern may be arranged between the gate electrode structures and the vertical channels. Each of the gate electrode structures may include a barrier film, a metal gate, and a crystal grain boundary plugging layer. The crystal grain boundary plugging layer may be between the barrier film and the metal gate.

Semiconductor memory device and conductive structure

Provided is a self-repairing energy generating element using a shape memory polymer, including a first electrode; a shape memory friction layer made of the shape memory polymer on the first electrode and having a microbump pattern formed on a surface thereof; a second electrode disposed apart from the shape memory friction layer; and an opposing layer formed on the second electrode and configured to face the shape memory friction layer.

Self-repairing energy generating element using shape memory polymer

A hybrid power generating device can include: a first substrate; a lower electrode layer disposed on the first substrate; a piezoelectric layer disposed on the lower electrode layer, and formed of a complex in which an inorganic piezoelectric material and an organic polymer matrix are mixed; a spacer disposed on the piezoelectric layer; an upper electrode layer disposed on the spacer and configured to rub against the piezoelectric layer so as to be charged along with the piezoelectric layer; and a second substrate disposed on the upper electrode layer.

Hybrid power generating device

Provided is a hybrid power generating device. The hybrid power generating device includes a solar cell configured to generate an electric energy using sunlight; an electrostatic generating device configured to generate an electric energy using static electricity; and a rectifier configured to electrically connect the electric energy generated by the solar cell to the electric energy generated by the electrostatic generating device.

Provided are a triboelectric energy generator using a control of a dipole polarization direction and a method of fabricating the same. The present invention controls a direction of a charging property generated by friction through a control of a dipole polarization using a ferroelectric or piezoelectric property of a material, and by using this control, the present invention is related to a triboelectric energy generator in a disk type in which a frictional charging material is slidable on a thin film only using control of a dipole polarization without need of an additional patterning process and output power is improved.

Triboelectric energy generator using control of dipole polarization direction and method of fabricating thereof

An electrostatic energy generator may include one or more first tire cord fabrics each including a conductive material which is a wire-shaped electrode and a non-conductive material, the non-conductive material configured to surround an outer peripheral surface of the conductive material, and one or more second tire cord fabrics each including a conductive material which is a wire-shaped electrode, and a material configured to surround an outer peripheral surface of the conductive material that is different from the non-conductive material of the first tire cord fabric, wherein the first tire cord fabric and the second tire cord fabric are arranged in a longitudinal direction so as to be in contact with each other and form a bundle, such that frictional electricity is generated due to a friction between the first tire cord fabric and the second tire cord fabric.

Electrostatic energy generator using tire cord fabric

A two-dimensionally structured material is transferred onto a ferroelectric or piezoelectric material layer, a property of the two-dimensionally structured material is controlled by poling performed on the ferroelectric or piezoelectric material to generate electric power generated by friction between the two-dimensionally structured material and a frictional charged material, and the electrostatic energy harvester has improved transparency and mechanical properties using the two-dimensionally structured material.

Electrostatic energy harvester with improved transparency and mechanical property using two-dimensional material on ferroelectric or piezoelectric material

A memory device includes a vertical string of nonvolatile memory cells on a substrate, along with a ground selection transistor extending between the vertical string of nonvolatile memory cells and the substrate. The ground selection transistor can have a current carrying terminal electrically coupled to a channel region of a nonvolatile memory cell in the vertical string of nonvolatile memory cells. The ground selection transistor includes a gate electrode associated with a ground selection line of the memory device. This gate electrode includes: (i) a mask pattern, (ii) a barrier metal layer of a first material extending opposite a sidewall of the mask pattern and (iii) a metal pattern of a second material different from the first material extending between at least a portion of the barrier metal layer and the mask pattern.

Semiconductor memory devices

An electrostatic energy-harvesting device is provided. The electrostatic energy-harvesting device with a 3-dimensional cone shape includes a first structure including a first substrate having a cone shape with an opened lower surface and a hollow inside, and a first rubbing electrified body disposed on an outer surface of the first substrate; a second structure including a second substrate having the same shape as the first substrate and a second rubbing electrified body which includes a material having opposite electrification characteristics to the first rubbing electrified body and disposed on an inner surface of the second substrate; and leader lines connected to each of the first rubbing electrified body and the second rubbing electrified body.

Electrostatic energy-harvesting device having 3-dimensional cone shape

Disclosed is a fibrous triboelectric generator. The fibrous triboelectric includes a first textile; a first electrode layer that is formed on a surface of the first textile; a friction layer that is formed on a surface of the first electrode layer and is able to be electrically charged by friction; and a second electrode layer that is able to undergo friction with the friction layer.

Fibrous triboelectric generator and electronic stimulator using the fibrous triboelectric generator and clothes using the electronic stimulator

A nanogenerator and a method of manufacturing the same are provided. The nanogenerator includes a boron nitride atomic layer, and a first electrode and a second electrode disposed on the boron nitride atomic layer.

Nanogenerator comprising boron nitride atomic layer

Growing community of inventors

Suwon-si, South Korea

Keun Young Lee