Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Keun Woo Kim

Yong Su Lee

Han Bit Kim

Doo Na Kim

Jae Hwan Chu

Tae Wook Kang

Sang Sub Kim

Jae Seob Lee

Do Kyeong Lee

Hye Na Kwak

Bum Mo Sung

Mee Jae Kang

Thanh Tien Nguyen

Ji Yeong Shin

Myoung Geun Cha

Sang Gun Choi

Ki Seok Choi

Jin-Gyu Kang

Doo-Na Kim

Kwang Hyun Kim

Zail Lhee

Yung Bin Chung

Yeoung Keol Woo

Yun Jung Oh

Chan Yeob Seol

A display device offering a stabilized output of a small gate driving circuit is presented. The display device includes a substrate having a display area and a non-display area; a pixel disposed in the display area of the substrate; and a gate driving circuit disposed in the non-display area of the substrate and connected to a transistor of the pixel, wherein the gate driving circuit comprises: a node control unit; a pull-up transistor connected to a set node of the node control unit through a gate electrode; and a pull-down transistor connected to a reset node of the node control unit through a gate electrode, wherein a width of a first channel region of the pull-up transistor is greater than a width of a second channel region of the pull-down transistor.

Display device

A display device includes: a sub-pixel connected to a k-th scan line and a j-th data line crossing the k-th scan line, wherein the sub-pixel includes: a light emitting element; a driving transistor configured to provide a driving current to the light emitting element according to a data voltage applied to a gate electrode thereof and including a first lower line; a first sub-transistor and a second sub-transistor connected to the gate electrode of the driving transistor and connected to each other in series; and a first node connecting the first sub-transistor and the second sub-transistor to each other, and the first node is connected to the first lower line.

An embodiment provides a display device including: a substrate; a plurality of transistors disposed on the substrate, each of the plurality of transistors including a semiconductor layer disposed on the substrate, and a gate electrode disposed on the semiconductor layer; and a light emitting element positioned on the data conductor layer, wherein the plurality of transistors include a driving transistor that transmits a driving voltage to the light emitting element and a compensation transistor that is turned on in response to a scan signal, the semiconductor layer includes a first portion having a first thickness and a second portion having a second thickness thinner than the first thickness, and the driving transistor is disposed in the first portion of the semiconductor layer.

A pixel includes: a light emitting element; a first transistor including a first electrode connected to a first power line, to which a voltage of the first power supply is supplied, where the first transistor controls, in response to a voltage of a first node connected to a gate electrode thereof, current flowing from the first power line to a second power line, to which a voltage of a second power supply is supplied, via the light emitting element; a second transistor connected between a data line and a second node, where the second transistor is turned on when a first scan signal is supplied thereto through a first scan line; a first capacitor connected between the first node and the second node; and a connector electrically connected between the first node to the second node.

Pixel and display device including the same

The present disclosure relates to a display device which includes: a substrate; a semiconductor layer disposed on the substrate and including a driving transistor and a second transistor each of which including a channel, a first region, and a second region; a first gate insulating layer disposed on the semiconductor layer, a gate electrode of the second transistor disposed on the first gate insulating layer and overlapping the channel of the second transistor; a second gate insulating layer disposed on the gate electrode of the gate electrode of the second transistor; and a gate electrode of the first driving transistor disposed on the second gate insulating layer and overlapping the channel of the driving transistor.

A display device includes pixels at least one of which includes a light emitting element connected between a first power source and a second power source, a first transistor connected between the first power source and the light emitting element and controlling a driving current flowing through the light emitting element in response to a voltage of a first node, a switching transistor connected to the first node and including and active layer that includes first and second conductive regions spaced apart from each other, first and second channel regions disposed between the first and second conductive regions, and a common conductive region disposed between the first and second channel regions, and a conductive pattern overlapping the active layer to face the common conductive region.

Pixel and display device having the same

A display device includes a light emitting element disposed on a substrate, a first transistor which controls a driving current flowing in the light emitting element, a second transistor which supplies a data voltage to a gate electrode of the first transistor, a first-third transistor and a second-third transistor connected in series between the gate and drain electrodes of the first transistor, a first charge injection layer adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor on a semiconductor region of the first-third transistor, and a second charge injection layer adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor on a semiconductor region of the second-third transistor. A charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.

Display device and method of manufacturing the same

A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

Transistor substrate and display device including the same

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

Light emitting display device and manufacturing method thereof

A display device includes: a plurality of pixels connected to gate lines and data lines; a gate driver to supply a gate signal to the gate lines; and a data driver to supply a data signal to the data lines. The gate driver includes: a first transistor including a first active layer at a first layer; and a second transistor including a second active layer at a second layer on the first layer.

An embodiment of a display device includes a flexible substrate including a polyimide layer and a barrier layer disposed on the polyimide layer. A driving transistor and a second transistor are disposed on the flexible substrate and include a polycrystalline semiconductor layer. A third transistor is disposed on the flexible substrate and includes an oxide semiconductor layer. A light emitting diode is electrically connected to the driving transistor. A bottom shield layer is disposed between the polyimide layer and the polycrystalline semiconductor layer in a cross-sectional view and disposed around a channel of the driving transistor in a plan view.

Display device including bottom shield layer disposed between polyimide layer and polycrystalline semiconductor layer

A display device includes a first transistor configured to control a driving current flowing from a first electrode to a second electrode according to a voltage applied to a gate electrode of the first transistor, and a second transistor between the second electrode of the first transistor and the gate electrode of the first transistor, the second transistor including a first sub-transistor and a second sub-transistor. A same scan signal is to be transmitted to a gate electrode of the first sub-transistor and a gate electrode of the second sub-transistor. A gate insulating layer of the first sub-transistor includes a first thickness. A gate insulating layer of the second sub-transistor includes a second thickness smaller than the first thickness.

A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Display device and method of fabricating the same

A flexible display device includes: a flexible substrate; a semiconductor layer on the flexible substrate, the semiconductor layer including a polycrystalline semiconductor; a gate insulation layer on the semiconductor layer; and a gate electrode on the gate insulation layer, the gate electrode overlapping a channel region of the semiconductor layer in a plan view, wherein the semiconductor layer includes a source region and a drain region that are at opposite sides of the channel region, wherein the channel region includes a first region contacting the source region and a second region contacting the drain region, and wherein a channel width of the first region is greater than a channel width of the second region.

Growing community of inventors

Yongin-si, South Korea

Keun Woo Kim