Samsung Electronics Co., Ltd.

Mostop Co., Ltd.

Keun Won Lee

Do Hyung Kim

Changwoo Lee

Hauk Han

Kyungwook Park

Hyun Seok Lim

Won Kyu Lim

Taisoo Lim

Jeong Gil Lee

Kyung Eui Hong

Sung Nam Lyu

Yi Hyun Nam

Wangyup Ryu

Seung Soo Lee

A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.

Methods of manufacturing semiconductor devices and apparatuses for manufacturing the same

A distance measuring sensor assembly and an electronic device having the same, the sensor assembly including: a housing; a first lens provided at an upper part of the housing; a sensor module provided inside the housing, and having a light emitting part aligned with the first lens and emitting light toward an object, and a light receiving part disposed to be adjacent to the light emitting part. A reception part is provided at the upper part of the housing and spaced apart from the first lens. The light reflected from the object enters through the reception part. A second lens is provided at a lower part of the reception part and refracts the light entering from the reception part, and an optical waveguide part coupled to the second lens is used to guide the light having transmitted from the second lens to the light receiving part.

Distance measuring sensor assembly and electronic device having same

A method of manufacturing a semiconductor device includes alternately stacking sacrificial layers and interlayer insulating layers on a substrate, to form a stack structure; forming channels penetrating through the stack structure; forming separation regions penetrating through the stack structure; forming lateral openings by removing the sacrificial layers through the separation regions; and forming gate electrodes in the lateral openings. Forming the gate electrodes may include forming a nucleation layer in the lateral openings by supplying a source gas and a first reaction gas, and forming a bulk layer on the nucleation layer to fill the lateral openings by supplying the source gas and a second reaction gas, different from the first reaction gas. The first reaction gas may be supplied from a first reaction gas source, stored in a gas charging unit, and supplied from the gas charging unit.

Methods of manufacturing semiconductor devices

Growing community of inventors

Seongnam-si, South Korea

Keun Won Lee