Suzhou Lekin Semiconductor Co., Ltd.

Keun Uk Park

Jeong Sik Lee

Yeo Jae Yoon

Sang Heon Han

An embodiment relates to a surface emitting laser device and a light emitting device including the same. A surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an aperture area disposed on the active layer and including an aperture and an insulating region; and a second reflective layer disposed in the aperture area. The active layer may comprise a plurality of quantum wells, quantum barriers, and intermediate layers disposed between the quantum wells and the quantum barriers. The quantum wells and the quantum barriers may include a ternary material, and the intermediate layers may comprise a binary material.

Surface emitting laser device and light emitting device including the same

An embodiment relates to a surface-emitting laser element, a light-emitting device comprising same, and a method for manufacturing same. A surface-emitting laser element according to an embodiment may comprise: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer; an aperture region disposed on the active layer and including an aperture and an insulation region; and a second reflective layer disposed on the aperture region. The doping level of the aperture region may be (X+3)×XE18 (atoms/cm) A ratio (b/a) of a second minimum diameter (b) to a first maximum diameter (a) of the aperture may be [95.0−(2X/3)]% to [99.9−(X/3)]%, wherein X may be 0 to 3.

Surface emitting laser device, light-emitting device including the same and manufacturing method thereof

A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.

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Seoul, South Korea

Keun Uk Park