Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Skhynix Inc.

Hyundai Electronics Inc. Co., Ltd.

Keun Kyu Kong

Jae Chang Jung

Ki Ho Baik

Geun Su Lee

Jin Soo Kim

Hyeong Soo Kim

Min Ho Jung

Myoung Soo Kim

Cha Won Koh

Hyoung Gi Kim

Jae-chang Jung

Sung Eun Hong

Young-Sik Kim

Ki Soo Shin

Sung Koo Lee

Jin-soo Kim

Cheol Kyu Bok

Chi Hyeong Roh

Min Seok Son

Jae Hee Sim

Young Sun Hwang

Gyu Dong Park

Jeong Hoon An

Ki Ho Balk

Seok-kyun Kim

A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.

Semiconductor integrated circuit device with a surface and method of manufacturing the same

A method for fabricating a semiconductor device includes forming an interlayer insulating film over a semiconductor substrate. The interlayer insulating film is selectively etched to form a hole defining a storage node region. A lower electrode is formed in the hole. A support layer is formed over the lower electrode. The support layer fills an upper part of the hole and exposes the interlayer insulating film. A dip-out process is performed to remove the interlayer insulating film. The supporting layer is removed to expose the lower electrode. A dielectric film is formed over the semiconductor substrate including the lower electrode. A plate electrode is formed over the semiconductor substrate to fill the dielectric film and the lower electrode.

Capacitor of semiconductor device and method for fabricating the same

A method for forming a fine pattern of a semiconductor device overcomes resolution limits of exposure equipment. The method includes forming a first photoresist pattern over an underlying layer formed over a semiconductor substrate. An amorphous carbon film and a second photoresist film are sequentially deposited over the first photoresist pattern. The second photoresist film and the amorphous carbon film are planarized to expose the first photoresist pattern. A thick portion and a thin portion of the amorphous carbon film is formed. The first photoresist pattern and the second photoresist film are removed. Etching is performed on the thin portion of the amorphous carbon film and the underlying layer using the thick portion of the amorphous carbon film as an etch mask. The thick portion of the amorphous carbon film is removed to expose a fine pattern of the underlying layer.

Method for forming fine patterns of a semiconductor device

Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (HO) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (&#x2014;COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (&#x2014;SOH) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R, R, R, R, R, A, l and n are defined in the specification.

Cleaning solution for removing photoresist

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Method for forming a pattern on a semiconductor device and semiconductor device resulting from the same

A method for forming a fine pattern in a semiconductor device is provided. In one aspect, the method can construct a fine pattern in semiconductor devices. The fine pattern has a critical dimension that overcomes the resolution limit of an exposure equipment.

Method for forming fine pattern in semiconductor device

The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F(157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same

Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same

The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R' and R&#x2033; individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched Calkyl, straight or branched Cester, straight or branched Cketone, straight or branched Ccarboxylic acid, straight or branched Cacetal, straight or branched Calkyl including at least one hydroxyl group, straight or branched Cester including at least one hydroxyl group, straight or branched Cketone including at least one hydroxyl group, straight or branched Ccarboxylic acid including at least one hydroxyl group, and straight or branched Cacetal including at least one hydroxyl group.

Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Light absorbent agent polymer for organic anti-reflective coating and preparation method and organic anti-reflective coating composition comprising the same

The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Top-coating composition for photoresist and process for forming fine pattern using the same

A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.

Growing community of inventors

Icheon-si, South Korea

Keun Kyu Kong