Skhynix Inc.

Hynix Semiconductor Inc.

Keun Do Ban

Cheol Kyu Bok

Jung Gun Heo

Myoung Soo Kim

Ki Lyoung Lee

Hong Ik Kim

Jong Cheon Park

Jung Hyung Lee

Geun Su Lee

Young Sik Kim

Sam Young Kim

Hyun Kyung Shim

Min Ae Yoo

Jae Chang Jung

Seung Chan Moon

Sa Ro Han Park

Jun Hyeub Sun

Hee Youl Lim

Chang Il Oh

Myoung Ja Min

A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains.

Nano-scale structures

A method of forming fine patterns includes forming pillars arrayed in rows and columns on an underlying layer and forming a spacer layer on the underlying layer to cover the pillars. Portions of the spacer layer respectively covering the pillars arrayed in each row or in each column are in contact with each other to provide first interstitial spaces disposed between the pillars arrayed in a diagonal direction between a row direction and a column direction as well as to provide cleavages at corners of each of the first interstitial spaces in a plan view. A healing layer is formed on the spacer layer to fill the cleavages of the first interstitial spaces. The healing layer is formed to provide second interstitial spaces respectively located in the first interstitial spaces as well as to include a polymer material.

Methods of forming fine patterns

A fine pattern structure includes a lower hard mask layer on a pattern formation layer having a first region and a second region, first upper hard mask patterns disposed on the lower hard mask layer in the first region to expose portions of the lower hard mask layer, a second upper hard mask pattern covering the lower hard mask layer in the second region, guide patterns on the first and second upper hard mask patterns, neutralization patterns on the exposed portions of the lower hard mask layer in the first region, a first block co-polymer layer covering the guide patterns in the first region and the neutralization patterns, and a second block co-polymer layer covering the guide pattern in the second region.

Fine pattern structures having block co-polymer materials

A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends from the fourth opening and penetrates the underlying layer.

Methods of forming different sized patterns

A method of forming patterns includes forming an array of pillars on an underlying layer stacked on an etch target layer, forming a separation wall layer on the pillars to provide separation walls covering sidewalls of the pillars, forming a block copolymer layer on the separation wall layer, annealing the block copolymer layer to form first domains located between the pillars, and a second domain surrounding and isolating the first domains, selectively removing the first domains to form second openings, selectively removing the pillars to form fourth openings, forming fifth openings that extend from the second and fourth openings to penetrate the underlying layer, forming a sealing pattern that covers and seals dummy openings among the fifth openings, and forming seventh openings that extend from the fifth openings exposed by the sealing pattern to penetrate the etch target layer.

Methods of forming patterns

A method of forming patterns includes forming a guide pattern and first peripheral patterns on an underlying layer. The guide pattern provides first openings and the first peripheral patterns provide a fifth opening used in alignment of the guide pattern. An alignment status of the guide pattern is verified using the fifth opening. A block copolymer layer is formed to fill the first and fifth openings. The block copolymer layer is annealed to provide a blocking portion sealing the fifth opening and to form first domains in each first opening and a second domain surrounding the first domains formed in each first opening. The first domains are removed to form third openings. The underlying layer is etched using the blocking portion and sidewalls of the second domains as etch barriers to form fourth openings that extend from the third openings to penetrate the underlying layer.

Methods of forming patterns with block copolymer

Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.

A method for forming patterns includes forming ellipse pillars on an underlying layer. The ellipse pillar has an elongated feature and includes nose sides and long sides connecting the nose sides, and the four ellipse pillars form a diamond array around a separation space. A guide lattice attached to sides of the ellipse pillars is formed to open first windows in the separation space. Second windows are formed in the guide lattice by selectively removing the ellipse pillars. A block copolymer layer is formed to fill the first and second windows. The block copolymer layer is phase-separated to form a first domain and a first matrix in the first window and to form a plurality of second domains and second matrix in the second window. The first and second domains are selectively removed to form first openings and second openings.

Methods for forming patterns in honeycomb array

A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns.

A method of fabricating a pattern comprising sequentially forming a pattern formation layer and a neutral layer on over a substrate having in a first regions and a second regions, forming guide patterns on first portions of over the neutral layer in the second regions, forming a first block copolymer layers on over second portions of the neutral layer in the first regions, phase-separating the tint block copolymer layers such that each of the first block copolymer layers includes to form first polymer blocks having a first phase and first polymer blocks having a second phase, removing the guide patterns to form openings that expose the first portions of the neutral layer in the second region, forming a second block copolymer layer on over the phase-separated first block copolymer layers and in the openings, phase-separating the second block copolymer layer into to form second polymer blocks having the first phase and second polymer blocks having the second phase removing the second polymer blocks having the second phase and the first polymer blocks having the second phase, and etching the neutral layer and the pattern formation layer using the first polymer blocks having the first phase and the second polymer blocks having the first phase as an etch masks.

Methods of fabricating a pattern using the block co-polymer materials

A method of fabricating an interconnection structure according to an embodiment of the present invention, includes patterning a dielectric layer to form a first recession region, including a first nest-shaped recession region having a first width and a first line-shaped recession region having a second width, which is less than the first width. A guide spacer layer is formed on sidewalls of the first recession region to provide a second recession region including a second nest-shaped recession region in the first nest-shaped recession region. A self-assembling block copolymer material is formed to fill the second nest-shaped recession region. The self-assembling block copolymer material is annealed to form a polymer block domain and a polymer block matrix, surrounding the polymer block domain. The polymer block domain is removed to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is etched to form a via cavity.

Methods of fabricating interconnection structures

A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.

Method for manufacturing a semiconductor device

Methods of forming fine patterns are provided. The method includes reinforcing a hydrophobic property of a hard mask layer using a surface treatment process to form a neutral layer, forming a block co-polymer layer on the neutral layer, and phase-separating the block co-polymer layer into first domains and second domains.

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Gyeonggi-do, South Korea

Keun Do Ban