Samsung Display Co., Ltd.

Keum Hee Lee

June Whan Choi

Jae Woo Park

Woo Geun Lee

Jae Won Song

Zhu Xun

Kap Soo Yoon

Ji Young Jeong

Seung Sok Son

Jiyun Hong

Su Jung Jung

Joongeol Kim

Dong Hoon Shin

Yu Jun Kim

Seung-ha Choi

Man Jin Kim

Chang Yeol Lee

A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.

Method of manufacturing thin film transistor, method of manufacturing display apparatus and thin film transistor substrate

A display device includes a base layer; a first pattern disposed on the base layer; an insulating layer disposed on the first pattern and including layers; and a second pattern disposed on the insulating layer. At least two of the layers of the insulating layer include a same material.

Display device having multiple insulating layers of same material

A Liquid crystal display device and manufacturing method thereof are provided. According to an exemplary embodiment of the present disclosure, an LCD device includes: a first substrate including a display area and a non-display area disposed outside of the display area; a gate electrode disposed on the first substrate and including a first-layer gate electrode and a second-layer gate electrode disposed on the first-layer gate electrode; a pixel electrode disposed on the same layer as the first-layer gate electrode; a source electrode and a drain electrode disposed on the gate electrode to be spaced from each other; and a contact connecting the drain electrode and the pixel electrode and including a first-layer contact, which is disposed on the same layer as the pixel electrode, and a second-layer contact, which is disposed on the first-layer contact.

Liquid crystal display device and manufacturing method thereof

A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal suicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.

Thin film transistor array panel and method for manufacturing the same

A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal silicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.

Growing community of inventors

Goyang-si, South Korea

Keum Hee Lee