Applied Materials, Inc.

Kesong Hu

Xinhai Han

Deenesh Padhi

Chuan Ying Wang

Juan Carlos Rocha-Alvarez

Philip Allan Kraus

Anantha K Subramani

Jian Li

Zheng John Ye

Nagarajan Rajagopalan

Hang Yu

Daemian Raj Benjamin Raj

Masaki Ogata

Shailendra Srivastava

Steven D Marcus

Yang Guo

Wenjiao Wang

Kristopher R Enslow

Alok Jain

Chuanxi Yang

Joshua Maher

Ramcharan Sundar

Arun Kumar Kotrappa

Seyyed Abdolreza Fazeli

SeoYoung Lee

Tianyang Li

Steven Mosbrucker

Phaik Lynn Leong

Grace Qi En Teong

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Modified stacks for 3D NAND

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

Hot showerhead

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500&#xb0; C. and a voltage of greater than or about 600 V.

Semiconductor substrate supports with improved high temperature chucking

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Pleasanton, CA, United States of America

Kesong Hu