H.c. Starck Gmbh

Philipps-Universität Marburg

Philipps-university Marburg

Umicore Ag & Co Kg

H.c. Starck Clevios Gmbh

Kerstin Volz

Wolfgang Stolz

Knud Reuter

Jörg Sundermeyer

Jörg Koch

Thomas Ochs

Michael Pokoj

Alexei Merkoulov

Carsten Von Haenisch

Stefan Reinhard

Bernardette Kunert

Benjamin Ringler

Dominik Keiper

Andreas Beyer

Eduard Sterzer

Sangam Chatterjee

Stefanie Dehnen

Jens Peter Eussner

Nils W Rosemann

The invention provides the use of at least one binary group 15 element compound of the general formula RRE-E'RR(I) or RE(E&#x2032;RR)2 (II) as the educt in a vapor deposition process. In this case, R, R, Rand Rare independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E&#x2032; are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations&#x2014;compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

Use of at least one binary group 15 element compound, a 13/15 semiconductor layer and binary group 15 element compounds

The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaInNAsPSb, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

III/V-semiconductor

Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein

Tantalum and niobium compounds and their use for chemical vapour deposition (CVD)

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Dautphetal, Germany

Kerstin Volz