Infineon Technologies Ag

Kerstin Seibold

Michael Sebald

Jörg Rottstegge

Ernst-Christian Richter

Gertrud Falk

Oliver Kirch

Siew Siew Yip

Marion Kern

A process for chemically amplifying structured resists includes applying a chemically amplified resist to a substrate and structuring it in a customary manner. Preferably, the amplification agent is applied in an aqueous phase to the structured resist and, after chemical amplification is complete, excess agent is removed by an aqueous wash medium. By using water as a solvent for the amplification agent and as a wash medium, it is possible to avoid organic solvents that constitute an explosion hazard. Furthermore, removal of partially exposed resist sections is suppressed.

Process for modifying resist structures and resist films from the aqueous phase

The invention relates to a polymer obtained by copolymerization of a first comonomer having a group catalytically cleavable by acid, a second comonomer having an anchor group for the subsequent linkage of an amplification agent, and a third comonomer having a carboxyl group being esterified with an alkyl group. It is also possible for one or more carbon atoms in the alkyl group to be replaced by oxygen. The polymer may also include fourth comonomers that include silicon-containing groups. By using the alkyl or alkoxyalkyleneoxy side groups introduced with the third comonomer, the glass transition temperature of the polymer can be reduced so that a photoresist containing the polymer provides a homogeneous polymer film on heating.

Polymer material having a low glass transition temperature for use in chemically amplified photoresists for semiconductor production

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Nürnberg, Germany

Kerstin Seibold