Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Kerstin Schwarz

Walter Arnold

Ute Rabe

A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.

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Rehlingen-Siersburg, Germany

Kerstin Schwarz