Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Kerstin Neveling

Korbinian Perzlmaier

Alexander F Pfeuffer

Tobias Meyer

Frank Singer

Berthold Hahn

Siegfried Herrmann

Erwin Lang

Tansen Varghese

Marc Philippens

Andreas Biebersdorf

Petrus Sundgren

Sebastian Wittmann

Peter Stauss

Jens Mueller

Bruno Jentzsch

Christian Mueller

Julia Stolz

Ruth Boss

Martin Rudolf Behringer

Tony Albrecht

Clemens Vierheilig

Andreas Weimar

Heribert Zull

Anna Kasprzak-Zablocka

Roland Zeisel

Michael Binder

Christine Rafael

Andreas Rückerl

Christian Eichinger

Rainer Hartmann

Moses Richter

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

Optoelectronic semiconductor component

A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

Multi-chip carrier structure

μ-LED, μ-LED device, display and method for the same

In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

An optoelectronic semiconductor element may include an optoelectronic semiconductor chip. The optoelectronic semiconductor chip may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element connected to the first semiconductor layer in an electrically conductive manner, and a second contact element connected to the second semiconductor layer in an electrically conductive manner. The first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack. The first semiconductor layer to where the second semiconductor layer is exposed. The first contact element is arranged over the first semiconductor layer, and the second contact element is arranged over the first semiconductor layer.

Optoelectronic semiconductor component comprising a first and second contact element, and method for producing the optoelectronic semiconductor component

An optoelectronic semiconductor chip, comprising a first contact location () and a second contact location (), and a reflective layer (), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path () for the metal can form between the second and the first contact location. A means () which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

Optoelectronic semiconductor chip comprising a reflective layer

Growing community of inventors

Pentling, Germany

Kerstin Neveling