1. International Business Machines Corporation (106 from 164,108 patents)

2. Qualcomm Incorporated (45 from 41,326 patents)

3. Globalfoundries Inc. (9 from 5,671 patents)

4. Chartered Semiconductor Manufacturing Ltd (corporation) (4 from 962 patents)

5. Samsung Electronics Co., Ltd. (1 from 131,214 patents)

6. International Business Corporation (1 from 70 patents)

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2. 11545555 - Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the same

3. 11437379 - Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits

4. 11302638 - Hybrid conductor integration in power rail

5. 11257917 - Gate-all-around (GAA) transistors with additional bottom channel for reduced parasitic capacitance and methods of fabrication

6. 11152347 - Cell circuits formed in circuit cells employing offset gate cut areas in a non-active area for routing transistor gate cross-connections

7. 11145654 - Field effect transistor (FET) comprising channels with silicon germanium (SiGe)

8. 11121075 - Hybrid metallization interconnects for power distribution and signaling

9. 11038344 - Shunt power rail with short line effect

10. 10892364 - Dielectric isolated fin with improved fin profile

11. 10886385 - Semiconductor structures having increased channel strain using fin release in gate regions

12. 10854604 - Offset gate contact

13. 10763364 - Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods

14. 10700204 - Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods

15. 10593700 - Standard cell architecture with M1 layer unidirectional routing