Motorola Corporation

Ker-Wen Teng

Bich-Yen Nguyen

Wei E Wu

Louis C Parrillo

Karl L Wang

A multiple element integrated circuit trench cell having at least one vertical field effect transistor (FET) in a wall of a trench in a semiconductor substrate. The cell further comprises a central load device within the trench which is electrically connected to the vertical FET. The central load device may be an active load device, such as another field effect transistor, or a passive load device, such as a resistor. Additionally, a further FET may be present in another wall of the trench or in a lateral orientation adjacent the trench in the semiconductor surface. Two of these multiple element trench cells may be interconnected in various configurations to form conventional static random access memory (SRAM) cells.

Integrated circuit trench cell

A two-device trench cell having a transistor surrounded by a capacitor. This combined capacitor and transistor cell can be used as a memory cell. The capacitor is first fabricated into the walls of a trench leaving a narrowed trench into which a vertical metal-oxide-semiconductor field-effect-transistor (MOSFET) may be fabricated. One of the plates of the capacitor doubles as a source/drain layer of the transistor.

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Austin, TX, United States of America

Ker-Wen Teng