Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Keon-Young Kim

Hoon Hee Han

Jae-Wan Park

Jung-hun Lim

Jin-Woo Lee

Byoung-Moon Yoon

Jin-Uk Lee

Jun-Youl Yang

Young-taek Hong

Young-Ok Kim

Tae-Heon Kim

Jin-uk Lee

Sun-Joong Song

An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I):  A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.

Etchant composition and method of fabricating integrated circuit device using the same

The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant

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Seongnam-si, South Korea

Keon-Young Kim