Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Keon Hwa Lee

Yong Gyeong Lee

Baek Jun Kim

Kwang Ki Choi

Su Ik Park

Byeong Kyun Choi

Myung Sub Kim

Su Hyoung Son

Do Yub Kim

Hui Seong Kang

Ho Jae Kang

A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.

Semiconductor device including multiple distributed bragg reflector layers

A semiconductor element package includes: a semiconductor element arranged above a first substrate; first and second electrodes arranged above the first substrate and electrically connected to the semiconductor element; a housing which is arranged above the first substrate and arranged around the semiconductor element, and which has a stepped portion in the upper area thereof; a diffusion part arranged on the stepped portion of the housing and arranged above the semiconductor element; and a plurality of via holes penetrating the first substrate and the housing.

Semiconductor element package and autofocusing device

A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.

Laser diode

Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material. The diffusion unit may be disposed on the first upper surface of the first sidewall and may be disposed to be surrounded by the second sidewall.

Semiconductor device package and method for producing same

A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d), the second region (d), and the third region (d) have a ratio of d:d:d=1:0.9&#x2dc;1.1:1.

Light emitting element and electron beam deposition apparatus for manufacturing same

Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.

Light emitting diode and light emitting diode array comprising same

Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the light-emitting structure and the second electrode.

Light-emitting element and light-emitting element array comprising the same

The embodiment relates to a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. According to the embodiment, a light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first electrode electrically connected with the first conductive semiconductor layer, a second electrode electrically connected with the second conductive semiconductor layer, an insulating member provided on the light emitting structure while exposing the first electrode and the second electrode, a third electrode provided on the first electrode, and a fourth electrode provided on the second electrode. The third electrode includes a first part of the third electrode directly making contact with the first electrode and a second part of the third electrode, which is provided on the first part of the third electrode and has a horizontal width wider than the first part of the third electrode, and the fourth electrode includes a first part of the fourth electrode directly making contact with the second electrode and a second part of the fourth electrode, which is provided on the first part of the fourth electrode and has a horizontal width wider than the first part of the fourth electrode. The light extraction efficiency and the heat radiation characteristic may be improved, and the reliability may be improved.

Light emitting device, light emitting device package, light unit, and method of manufacturing same

A light emitting device is provided that may include a light emitting structure including a first conductivity-type semiconductor layer, an active layer provided on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer provided on the active layer, a first electrode that conductively contacts the first conductivity-type semiconductor layer, an insulating layer provided on a portion of the light emitting structure and the first electrode, and a second electrode that conductively contacts the second conductivity-type semiconductor layer, the first electrode including a first portion protruding from a side surface of the first conductivity-type semiconductor layer.

Light emitting device, light emitting device array and lighting apparatus including the same

A light emitting device includes a support member having a body, first and second pads spaced apart from each other on the body and a depression in the body; a light emitting chip having a light emitting structure and third and fourth pads under the light emitting structure; and an adhesive member between the support member and the light emitting chip, wherein the third pad is electrically connected to the first pad, the fourth pad is electrically connected to the second pad, the light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a portion of the adhesive member is disposed in the depression.

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Seoul, South Korea

Keon Hwa Lee