Samsung Electronics Co., Ltd.

Keon Hun Lee

Sang Don Lee

Suk Ho Yoon

Chul Min Kim

Tan Sakong

Jong Uk Seo

Do Young Rhee

Kee Won Lee

Ho Young Lee

Min Ho Kim

A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Lighting system

A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same

A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.

Semiconductor light emitting device

A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

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Seoul, South Korea

Keon Hun Lee