Samsung Electronics Co., Ltd.

Keo-sung Park

Young-Hoon Park

Chan Jae Park

Jae-Ho Song

Jong-wook Hong

Won-je Park

Sang-il Jung

Dae-cheol Seong

Won-Je Park

Yongsuk Choi

Jin-Hyeong Park

Eun-soo Kim

Hakyu Choi

Dongwook Won

Won-jeong Lee

Pu-ra Kim

A method of manufacturing an image sensor includes forming a first dopant region having a second conductivity type in a semiconductor substrate including first and second surfaces. The semiconductor substrate has a first conductivity type different from the second conductivity type. The method further includes forming a pixel isolation structure defining pixel regions in the semiconductor substrate, forming a vertical trench by patterning the first surface in each of the pixel regions, forming a mask pattern exposing each of the pixel regions on the first surface, in which the mask pattern includes a residual mask pattern filling at least a portion of the vertical trench, forming a second dopant region having the second conductivity type in the semiconductor substrate by using the mask pattern as an ion-implantation mask, in which the second dopant region is adjacent to the vertical trench, and forming a transfer gate electrode in the vertical trench.

Image sensor and method of manufacturing the same

A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.

Image sensors with lightly doped drain (LDD) to reduce dark current

Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

Methods of fabricating image sensors and image sensors fabricated thereby

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Seoul, South Korea

Keo-sung Park