Sharp Kabushiki Kaisha Corporation

Kenzo Kawano

Kazuyo Nakamura

Kunio Kamimura

Kiyotoshi Nakagawa

Yoshifumi Tonomura

Hidetoshi Washio

Hideyuki Ueyama

A solar cell including a semiconductor substrate of a first conductive type; a first region of a second conductive type provided on a surface of the substrate; and a bypass function region including a second region of a second conductive type provided on the surface of the substrate and spaced a predetermined distance from the first region, and a third region for setting the substrate and the second region at the same potential; wherein when a reverse voltage is applied between the substrate and the first region, the bypass function region forms a bypass circuit between the substrate and the first region using a depletion layer formed inside the substrate by the reverse voltage.

Solar cell and method for fabricating the same

A solar cell comprises a crystalline substrate having projections and depressions formed on either side or both sides of the substrate, wherein a projection-depression depth is 25 .mu.m or more.

Solar cell and production process therefor

A high voltage MOS field-effect semiconductor device comprising, as formed on a single seimconductor substrate a high voltage first MOS field-effect transistor and a conventional second MOS field-effect transistor operable at a lower voltage than the first transistor. The semiconductor substrate is covered with an aluminum or like conductor layer over the region thereof where the conventional second field-effect transistor is located.

Growing community of inventors

Yoshino-gun, Japan

Kenzo Kawano