Showa Denko K.k.

Mitsui Mining & Smelting Company, Ltd.

Toyoda Gosei Co., Ltd.

Showa Denko Kabushiki Kaisha

Fujitsu Corporation

Mitsui Mining Co., Ltd.

Kenzo Hanawa

Yasumasa Sasaki

Hisayuki Miki

Yasunori Yokoyama

Masatoshi Ichikawa

Gaku Oriji

Naruo Ueda

Keizo Iseki

Naoyoshi Mochizuki

Kazuaki Takahashi

Takehiko Okabe

Hiromitsu Sakai

Kazuhiko Kato

Hiroaki Kaji

Tsubasa Okada

Tsuyoshi Kato

Ryuji Monden

Kentaro Watanabe

Yoshiaki Takahashi

Kenji Shinozaki

Akiyoshi Hatada

Ko Nakamura

Yoshiaki Ikenoue

Hiroshi Osawa

Sadahiro Kishii

Yoshihiro Arimoto

Katsura Ito

Yasuyuki Ueda

Takayuki Araki

Tomoyuki Takei

Hiroshi Ohsawa

Sho Tonegawa

Hitoshi Yokouchi

Takaharu Hoshina

Kiyotaka Yanagi

Rintaro Suzuki

Sakiko Taenaka

Ryoko Konta

Noriko Hanzawa

Irwansyah

Takanori Kidoh

Norikazu Yamamoto

Shintaro Ishida

Takenori Nishikata

Akiko Sugimoto

Yoshinobu Okamura

Yasuhiro Asano

According to one aspect of the present invention, an organic fluorine compound is represented by a general formula(R-&#x3c0;-E-CH-A-CH-E')-&#x3c0;&#x2032;-G&#x2003;&#x2003;(1B)

Organic fluorine compound, lubricant, and processing method of magnetic recording medium

A redox flow battery includes: first carbon nanotubes having an average diameter of 100 nm or r core, and second carbon nanotubes having an average diameter of 30 nm or less, in which the second carbon nanotubes are adhered to surfaces of the first carbon nanotubes such that the second carbon nanotubes bridge between the plural first carbon nanotubes. Since the redox flow battery includes an electrode material and an electrode including the electrode material, the electromotive force and the charging capacity are high.

Electrode material including small diameter, carbon nanotubes bridging large diameter carbon nanotubes, redox flow battery electrode, redox flow battery, and method for producing electrode material

This collector plate includes a peripheral edge wall that surrounds a predetermined region, and is provided on at least one surface of the collector plate, in which a surface roughness (Ra) of a first surface which is an exposed surface of the peripheral edge wall on the side of one surface, which is measured along a direction perpendicular to an extension direction of the peripheral edge wall is greater than a surface roughness (Ra) of the first surface which is measured along the extension direction of the peripheral edge wall.

Collector plate and redox flow battery

A redox flow electrode according to one aspect of the present invention is a redox flow battery electrode disposed between an ion exchange membrane and a bipolar plate, wherein the electrode includes a conductive sheet containing carbon nanotubes having an average fiber diameter of 1 &#x3bc;m or less, and a porous sheet that is laminated to the conductive sheet and is formed from fibers having an average fiber diameter of greater than 1 &#x3bc;m.

Redox flow battery electrode, and redox flow battery

A redox flow battery is provided, including an ion-exchange membrane, a current collector plate, and an electrode that is disposed between the ion-exchange membrane and the current collector plate. The electrode includes a main electrode layer in which an electrolytic solution flows from a surface on the current collector plate side to a surface on the ion-exchange membrane side, and the main electrode layer includes a plurality of main electrode pieces which are arranged in parallel in a plane direction.

Redox flow battery

An electrode material including a conductive sheet containing carbon nanotubes having an average fiber diameter of 1 &#x3bc;m or less; a liquid inflow member that is formed on a first surface of the conductive sheet such that an electrolyte solution that is passed therethrough flows into the conductive sheet; and a liquid outflow member that is formed on a second surface of the conductive sheet and out of which flows the electrolyte solution that has passed through the conductive sheet; wherein, when using a sheet surface of the conductive sheet as a reference plane, the Darcy permeability, in an in-plane direction, inside the liquid inflow member, is at least 100 times the Darcy permeability, in a normal direction, through the conductive sheet.

Electrode material, electrode of redox flow battery, and redox flow battery

This method for producing a vanadium compound has an alkaline leaching step for immersing incineration ash in an alkaline solution to cause vanadium to leach from the incineration ash into the alkaline solution and obtain a leachate slurry, a solid-liquid separation step for separating the leachate slurry obtained in the alkaline leaching step into a solid and liquid followed by removing insoluble matter to obtain a leachate, a pH adjustment step for adding acid to the leachate following solid-liquid separation to make the leachate acidic, an aging step for aging the leachate following pH adjustment until a precipitate forms in the leachate, and a separation step for separating the precipitate from the leachate following the aging step.

Method for producing vanadium compound, method for producing vanadium solution, and method for producing redox flow battery electrolyte

According to the present invention, there is provided a recording medium comprising a substrate, a platinum layer formed on the substrate and having a (111) plane preferentially oriented, and a fullerene single crystal thin film formed on the platinum layer, and configured to be a recording layer, wherein an average value of average surface roughness Ra's with respect to four or more visual fields measured by using an atomic force microscope in a surface of the fullerene thin film is 0.5 nm or less.

Recording medium, method of manufacturing fullerene thin film, recording reproducing apparatus, information recording method, and information reading method

A lubricant for a magnetic recording medium of the present invention includes an organic compound having a fullerene skeleton, and the organic compound having the fullerene skeleton is expressed by the following general formula (i). 

Lubricant for magnetic recording medium, magnetic recording medium, manufacturing method of magnetic recording medium, and magnetic recording and reproducing device

A lubricant for a magnetic recording medium of the present invention includes an organic compound having a fullerene skeleton, and the organic compound having the fullerene skeleton is expressed by the general formula (i), and at least one hydroxyl group on a terminal of the organic compound having the fullerene skeleton is substituted by any one of hydrogen, a methyl group, and a trifluoro methyl group, in which A is a group in which any one hydroxyl group on a terminal of a fluoro compound is not included, and R1 is an organic group having 1 to 24 carbon atoms. 

A sputtering apparatus () includes: a chamber () having an inside maintained in a depressurized state to generate plasma discharge (); a cathode () placed in the chamber () and holding a target (); and a substrate holder () holding a substrate () so that one surface of the substrate () faces the surface of the target (). The substrate () is arranged at an upper portion in the sputtering apparatus () with the surface of the substrate () facing downward. The target () is arranged at a lower portion in the sputtering apparatus () with the surface of the target () facing upward. The sputtering apparatus () includes a heater () for heating the substrate (). The temperature of the substrate () is raised by absorbing electromagnetic waves radiated from the heater (). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

Sputtering apparatus and manufacturing method of semiconductor light-emitting element

The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Solar cell and process for producing the same

One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer () made of a group III nitride is laminated on a substrate (), an n-type semiconductor layer () comprising a base layer (), a light-emitting layer (), and a p-type semiconductor layer () are laminated on the buffer layer () in this order, comprising: a pretreatment step in which the substrate () is treated with plasma; a buffer layer formation step in which the buffer layer () having a composition represented by AlGaN (0&#x2266;x&#x3c;1) is formed on the pretreated substrate () by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer () is formed on the buffer layer ().

Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90&#xb0;.

Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus

According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

Group III nitride semiconductor multilayer structure and production method thereof

Growing community of inventors

Ichihara, Japan

Kenzo Hanawa